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J. Semicond. > 2008, Volume 29?>?Issue 5?> 898-902

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A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator

Liao Zaiyi, Pan Jiaoqing, Zhou Fan, Bian Jing, Zhu Hongliang, Zhao Lingjuan and Wang Wei

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Abstract: A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator.The gate shows an excellent DC logic "and" function with different load resistors.Its dynamical characteristics without packaging have also been measured.We observed a dynamic extinction ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s.

Key words: electroabsorption modulator, photodiode, monolithic integration

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    Received: 18 August 2015 Revised: 17 November 2007 Online: Published: 01 May 2008

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      Liao Zaiyi, Pan Jiaoqing, Zhou Fan, Bian Jing, Zhu Hongliang, Zhao Lingjuan, Wang Wei. A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator[J]. Journal of Semiconductors, 2008, 29(5): 898-902. ****Liao Z Y, Pan J Q, Zhou F, Bian J, Zhu H L, Zhao L J, Wang W. A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator[J]. J. Semicond., 2008, 29(5): 898.
      Citation:
      Liao Zaiyi, Pan Jiaoqing, Zhou Fan, Bian Jing, Zhu Hongliang, Zhao Lingjuan, Wang Wei. A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator[J]. Journal of Semiconductors, 2008, 29(5): 898-902. ****
      Liao Z Y, Pan J Q, Zhou F, Bian J, Zhu H L, Zhao L J, Wang W. A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator[J]. J. Semicond., 2008, 29(5): 898.

      A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator

      • Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      Funds:

      國(guó)家自然科學(xué)基金90401025

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-04
      • Revised Date: 2007-11-17
      • Published Date: 2008-05-05

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