Chin. J. Semicond. > 1995, Volume 16?>?Issue 10?> 794-797

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1995

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      陳向東，王連衛，林賢，林成魯，鄒世昌. 退火條件對β—FeSi_2形成的影響[J]. 半導體學報(英文版), 1995, 16(10): 794-797.
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      陳向東，王連衛，林賢，林成魯，鄒世昌. 退火條件對β—FeSi_2形成的影響[J]. 半導體學報(英文版), 1995, 16(10): 794-797.

      • Received Date: 2015-08-19

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