PAPERS
Guo Weilian, Niu Pingjuan, Miao Changyun, Yu Xin, Wang Wei, Liang Huilai, Zhang Shilin, Li Jianheng, Song Ruiliang, Hu Liuchang, Qi Haitao and Mao Luhong
Abstract: By analyzing resonant tunneling transistors (RTTs) synthesized with different device structures and treating RTTs with different device structures as inverter circuits,a unified inverter model for RTTs is established.In this model,the I-V characteristics of an RTT can be derived and analyzed with the same method used to analyze an inverter.The various I-V characteristics of RTTs with different device structures can then be explained with a unified inverter theory.The results derived by this model are in agreement with those of corresponding circuit simulations and experiments.This unified inverter model of RTTs is a powerful tool for the design and analysis of RTTs.
Key words: RTT, unified inverter model, device structure of RTT, I-V characteristics of RTT
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Received: 18 August 2015 Revised: 10 August 2006 Online: Published: 01 January 2007
| Citation: |
Guo Weilian, Niu Pingjuan, Miao Changyun, Yu Xin, Wang Wei, Liang Huilai, Zhang Shilin, Li Jianheng, Song Ruiliang, Hu Liuchang, Qi Haitao, Mao Luhong. An Inverter Unified Model of RTT[J]. Journal of Semiconductors, 2007, 28(1): 84-91.
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Guo W L, Niu P J, Miao C Y, Yu X, Wang W, Liang H L, Zhang S L, Li J H, Song R L, Hu L C, Qi H T, Mao L H. An Inverter Unified Model of RTT[J]. Chin. J. Semicond., 2007, 28(1): 84.
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