Abstract: Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system.Then,the as-grown Ge quantum dots are annealed by ArF excimer laser.In the ultra-shot laser pulse duration,~20ns,bulk diffusion is forbidden,and only surface diffusion occurs,resulting in a laser induced quantum dot (LIQD).The diameter of the LIQD is 20~25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6E10cm-2.The surface morphology evolution is investigated by AFM.

Key words: Ge quantum dot, ArF excimer laser annealing, LIQD, AFM