Chin. J. Semicond. > 2007, Volume 28?>?Issue 12?> 1937-1940

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Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation

Cai Kunhuang, Zhang Yong, Li Cheng, Lai Hongkai and Chen Songyan

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Abstract: An ultra-low dislocation density of 1.2e5cm-2,95% strain relaxed,compositionally graded SiGe layer formed by dry oxidizing the strained Si0.88Ge0.12 alloy on Si (100) substrates at 1000℃ was prepared.By comparing samples with various oxidation times,the relaxation mechanisms of the strained SiGe layers during the oxidation processes were analyzed.

Key words: oxidation, SiGe buffer layer, dislocation

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    Received: 18 August 2015 Revised: 11 July 2007 Online: Published: 01 December 2007

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      Cai Kunhuang, Zhang Yong, Li Cheng, Lai Hongkai, Chen Songyan. Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation[J]. Journal of Semiconductors, 2007, 28(12): 1937-1940. ****Cai K H, Zhang Y, Li C, Lai H K, Chen S Y. Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation[J]. Chin. J. Semicond., 2007, 28(12): 1937.
      Citation:
      Cai Kunhuang, Zhang Yong, Li Cheng, Lai Hongkai, Chen Songyan. Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation[J]. Journal of Semiconductors, 2007, 28(12): 1937-1940. ****
      Cai K H, Zhang Y, Li C, Lai H K, Chen S Y. Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation[J]. Chin. J. Semicond., 2007, 28(12): 1937.

      Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation

      • Semiconductor Photonics Research Center,Department of Physics,Xiamen University,Xiamen 361005,China

      • Semiconductor Photonics Research Center,Department of Physics,Xiamen University,Xiamen 361005,China

      • Semiconductor Photonics Research Center,Department of Physics,Xiamen University,Xiamen 361005,China

      • Semiconductor Photonics Research Center,Department of Physics,Xiamen University,Xiamen 361005,China

      • Semiconductor Photonics Research Center,Department of Physics,Xiamen University,Xiamen 361005,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-05
      • Revised Date: 2007-07-11
      • Published Date: 2007-11-28

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