香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 2?> 334-337

PAPERS

Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs

Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong and Wang Yuehu

+ Author Affiliations

PDF

Abstract: Based on the DC model and the self-heating model of SiC MESFETs, the self-heating effect is investigated in detail.The back-gated effect and its influence on high temperature characteristics are studied.The simulation results show that the activation energy of the traps is 1.07eV with a capture cross section of 1e-8cm2.The back-gate potential increases as trap concentration increases, and it reaches ~3V at room temperature.As the drain voltage increases, the back-gate potential decreases.The proposed model is valuable in the design of high-power and high-temperature applications.

Key words: SiC, MESFET, self-heating, deep level trap

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3562 Times PDF downloads: 1304 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 14 August 2007 Online: Published: 01 February 2008

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Wang Yuehu. Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs[J]. Journal of Semiconductors, 2008, 29(2): 334-337. ****Lü H, Zhang Y M, Zhang Y M, Che Y, Wang Y H. Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs[J]. J. Semicond., 2008, 29(2): 334.
      Citation:
      Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Wang Yuehu. Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs[J]. Journal of Semiconductors, 2008, 29(2): 334-337. ****
      Lü H, Zhang Y M, Zhang Y M, Che Y, Wang Y H. Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs[J]. J. Semicond., 2008, 29(2): 334.

      Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Department of Ordnance and Transportation, Engineering College of CAPF, Xi'an 710086, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-21
      • Revised Date: 2007-08-14
      • Published Date: 2008-01-31

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return