Abstract: An n-channel field-effect-transistor (FFET) with a metal/ferroelectric/metal/insulator/Si substrates (MFMIS) structure is fabricated by using a Pb(Zr0.52Ti0.48)O3 (PZT) thin film of the preferential orientation of (111) on Si substrates prepared by the RF magnetron sputtering technique integrated with semiconductor technology.TheC-V characteristics,I-V characteristics,and data writing speed of the FFET are investigated.The clockwise C-V and counterclockwise Id-Vg hysteresis loops of the n-channel FFET demonstrate that the FFET could realize a memory effect due to the ferroelectric polarization of PZT thin film.The memory window of the FFET is 2V,observed from the C-V and Id-Vg hysteresis curves with Vg swinging between -5 and +5V.

Key words: RF magnetron sputtering, MFMIS, FFETs, memory window