Abstract: An accuracy large-signal equivalent circuit model of radio frequency silicon-on-insulator (RF-SOI) lateral double diffused MOSFET (LDMOSFET) with body-contact is presented.Both the equations for channel current and bias-dependence capacitors modeling are continuous and high order drivable.A new charge conservative expression is developed.The bias dependences of the drift resistor,parasitic resistor,and capacitor under the lightly doped drain region are considered.The power dissipation caused by self-heating and the frequency distribution of the transconductor are described.The model is finally used to construct a 20-gate-fingers (channel mask length,L=1μm,finger width,W=50μm) RF-SOI LDMOSFET on high resistivity SOI with body-contact device modeling.Comparison results of the measured and simulated DC,S-parameters,and power characteristics are supplied to demonstrate the excellent accuracy of the model.

Key words: RF-SOI LDMOSFET, body-contact, large-signal model, derivable, harmonic power