Chin. J. Semicond. > 2007, Volume 28?>?Issue 7?> 1107-1111

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Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor

Qi Haitao, Li Yali, Zhang Xiongwen, Feng Zhen, Shang Yaohui and Guo Weilian

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Abstract: Based on the conception of RTD/HEMT series connection resonant tunneling transistors,an RTD/HEMT monolithic integration material structure was designed and grown by molecular beam epitaxy.RTT was fabricated using wet chemical etching,metal lift-off,mass isolation,and air bridge technologies.The device has a distinct gate-controlled negative differential resistance.The maximal peak-to-valley current ratio (PVCR) of the forward direction connection RTT is about 2.2 and the maximal PVCR of the backward direction connection RTT is about 4.6.This experiment lays a foundation for the optimization of RTT and RTD/HEMT monolithic integration circuit development.

Key words: resonant tunneling transistor, resonant tunneling diode, high electron mobility transistor, PVCR

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    Received: 18 August 2015 Revised: 12 March 2007 Online: Published: 01 July 2007

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      Qi Haitao, Li Yali, Zhang Xiongwen, Feng Zhen, Shang Yaohui, Guo Weilian. Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor[J]. Journal of Semiconductors, 2007, 28(7): 1107-1111. ****Qi H T, Li Y L, Zhang X W, Feng Z, Shang Y H, Guo W L. Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor[J]. Chin. J. Semicond., 2007, 28(7): 1107.
      Citation:
      Qi Haitao, Li Yali, Zhang Xiongwen, Feng Zhen, Shang Yaohui, Guo Weilian. Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor[J]. Journal of Semiconductors, 2007, 28(7): 1107-1111. ****
      Qi H T, Li Y L, Zhang X W, Feng Z, Shang Y H, Guo W L. Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor[J]. Chin. J. Semicond., 2007, 28(7): 1107.

      Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-24
      • Revised Date: 2007-03-12
      • Published Date: 2007-07-05

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