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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1799-1803

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A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization

Ge Ji, Jin Zhi, Liu Xinyu, Cheng Wei, Wang Xiantai, Chen Gaopeng and Wu Dexin

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Abstract: This paper investigates the relationship between the impact ionization and temperature in ultra high-speed InP-based SHBTs.Considering the effect of temperature,an improved equation of the multiplication factor for InP-based HBTs is derived at an approximation of the electric field.A new SDD model including impact ionization and self-heating effects is developed for ultra high-speed InP-based SHBTs.The simulation result is consistent with the experimental data,indicating the accurate predictions of the model.

Key words: impact ionization, temperature dependent,  ultra high-speed InP-based SHBTs,  SDD model

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    Received: 18 August 2015 Revised: 21 April 2008 Online: Published: 01 September 2008

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      Ge Ji, Jin Zhi, Liu Xinyu, Cheng Wei, Wang Xiantai, Chen Gaopeng, Wu Dexin. A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization[J]. Journal of Semiconductors, 2008, 29(9): 1799-1803. ****Ge J, Jin Z, Liu X Y, Cheng W, Wang X T, Chen G P, Wu D X. A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization[J]. J. Semicond., 2008, 29(9): 1799.
      Citation:
      Ge Ji, Jin Zhi, Liu Xinyu, Cheng Wei, Wang Xiantai, Chen Gaopeng, Wu Dexin. A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization[J]. Journal of Semiconductors, 2008, 29(9): 1799-1803. ****
      Ge J, Jin Z, Liu X Y, Cheng W, Wang X T, Chen G P, Wu D X. A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization[J]. J. Semicond., 2008, 29(9): 1799.

      A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-03-27
      • Revised Date: 2008-04-21
      • Published Date: 2008-09-03

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