Chin. J. Semicond. > 2007, Volume 28?>?Issue 12?> 1860-1863

LETTERS

In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz

Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Yang Hao, Xu Jingbo, Song Yuzhu, Zhang Jian, Niu Jiebin and Liu Xunchun

+ Author Affiliations

PDF

Abstract: By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fabricated.Thefmax is the highest value for HEMTs in China.Also,the devices are reported,including the device structure,the fabrication process,and the DC and RF performances.

Key words: maximum oscillation frequency/power-gain cutoff frequency, high electron mobility transistor, InGaAs/InAlAs,  InP

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3495 Times PDF downloads: 1045 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 12 June 2007 Online: Published: 01 December 2007

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Yang Hao, Xu Jingbo, Song Yuzhu, Zhang Jian, Niu Jiebin, Liu Xunchun. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Journal of Semiconductors, 2007, 28(12): 1860-1863. ****Liu L, Zhang H Y, Yin J J, Li X, Yang H, Xu J B, Song Y Z, Zhang J, Niu J B, Liu X C. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Chin. J. Semicond., 2007, 28(12): 1860.
      Citation:
      Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Yang Hao, Xu Jingbo, Song Yuzhu, Zhang Jian, Niu Jiebin, Liu Xunchun. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Journal of Semiconductors, 2007, 28(12): 1860-1863. ****
      Liu L, Zhang H Y, Yin J J, Li X, Yang H, Xu J B, Song Y Z, Zhang J, Niu J B, Liu X C. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Chin. J. Semicond., 2007, 28(12): 1860.

      In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-12
      • Revised Date: 2007-06-12
      • Published Date: 2007-11-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return