Chin. J. Semicond. > 2007, Volume 28?>?Issue 12?> 1864-1867

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Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency

Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, Song Yuzhu, Niu Jiebin and Liu Xunchun

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Abstract: Lattice-matched In0.53Ga0.47As/In0.52Al0.48A high electron mobility transistors (HEMTs) with a cutoff frequency (fT) as high as 218GHz are reported.This fT is the highest value ever reported for HEMTs in China.These devices also demonstrate excellent DC characteristics:the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm.The material structure and all the device fabrication technology in this work were developed by our group.

Key words: cutoff frequency, high electron mobility transistor, InGaAs/InAlAs, InP

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    Received: 18 August 2015 Revised: 23 July 2007 Online: Published: 01 December 2007

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      Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, Song Yuzhu, Niu Jiebin, Liu Xunchun. Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency[J]. Journal of Semiconductors, 2007, 28(12): 1864-1867. ****Liu L, Zhang H Y, Yin J J, Li X, Xu J B, Song Y Z, Niu J B, Liu X C. Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency[J]. Chin. J. Semicond., 2007, 28(12): 1864.
      Citation:
      Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, Song Yuzhu, Niu Jiebin, Liu Xunchun. Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency[J]. Journal of Semiconductors, 2007, 28(12): 1864-1867. ****
      Liu L, Zhang H Y, Yin J J, Li X, Xu J B, Song Y Z, Niu J B, Liu X C. Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency[J]. Chin. J. Semicond., 2007, 28(12): 1864.

      Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-23
      • Revised Date: 2007-07-23
      • Published Date: 2007-11-28

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