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Chin. J. Semicond. > 1994, Volume 15?>?Issue 2?> 139-144

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完全　MBE　生長(zhǎng)的內(nèi)含吸收型光柵　GaAlAs／GaAs　多量子阱增益耦合型分布反饋式半導(dǎo)體激光器

羅毅，司偉民，張盛忠，陳鏑，王健華，蒲銳

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    Received: 18 August 2015 Revised: Online: Published: 01 February 1994

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      羅毅，司偉民，張盛忠，陳鏑，王健華，蒲銳. 完全　MBE　生長(zhǎng)的內(nèi)含吸收型光柵　GaAlAs／GaAs　多量子阱增益耦合型分布反饋式半導(dǎo)體激光器[J]. 半導(dǎo)體學(xué)報(bào)(英文版), 1994, 15(2): 139-144.
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      羅毅，司偉民，張盛忠，陳鏑，王健華，蒲銳. 完全　MBE　生長(zhǎng)的內(nèi)含吸收型光柵　GaAlAs／GaAs　多量子阱增益耦合型分布反饋式半導(dǎo)體激光器[J]. 半導(dǎo)體學(xué)報(bào)(英文版), 1994, 15(2): 139-144.

      • Received Date: 2015-08-18

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