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Abstract: A 1-write-port 8-read-port 32×32-bit register file has been designed in 1.8V 0.18μm CMOS technology. Low-swing bit-lines are used for both read and write operations. Together with the use of novel memory cells, high speed sensor amplifiers, self-reset address decoders, SCL circuits, clock gating, and delicate time control circuits, it has achieved both high speed and low power. Post-layout simulations in 1.8V with HSPICE indicate a write time of 1.7ns and a read time of 1.32ns. The power dissipation is 70mW for all 9 ports at 500MHz.
Key words: high speed, low power, multi-port, SRAM, register file
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Received: 18 August 2015 Revised: 21 October 2006 Online: Published: 01 April 2007
| Citation: |
Cong Gaojian, Qi Jiayue. Design of a High-Speed Low-Power 9-Port Register File[J]. Journal of Semiconductors, 2007, 28(4): 614-618.
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Cong G J, Qi J Y. Design of a High-Speed Low-Power 9-Port Register File[J]. Chin. J. Semicond., 2007, 28(4): 614.
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