Chin. J. Semicond. > 2007, Volume 28?>?Issue 10?> 1589-1593

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Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors

Chen Ling, Zhu Wenqing, Bai Yu, Liu Xiang, Jiang Xueyin and Zhang Zhilin

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Abstract: Organic thin film transistors (OTFTs) with a modified gate insulator are demonstrated.The modified gate insulator layers consist of SiO2 as the gate insulator and OTS (octadecyltrichlorosilane) or PMMA (poly methyl methacylate) as the modified layer.The devices with the modified layer have a field-effect mobility larger than 1e-3cm2/(V·s) and an on/off current ratio greater than 1e4,while their leakage current is decreased to 1e-10A.The results demonstrate that using modified gate insulators is an effective method to fabricate OTFTs with improved electric characteristics.

Key words: organic thin-film transistors, gate dielectric, field-effect mobility, modified layer

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    Received: 18 August 2015 Revised: 31 May 2007 Online: Published: 01 October 2007

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      Chen Ling, Zhu Wenqing, Bai Yu, Liu Xiang, Jiang Xueyin, Zhang Zhilin. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Journal of Semiconductors, 2007, 28(10): 1589-1593. ****Chen L, Zhu W Q, Bai Y, Liu X, Jiang X Y, Zhang Z L. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Chin. J. Semicond., 2007, 28(10): 1589.
      Citation:
      Chen Ling, Zhu Wenqing, Bai Yu, Liu Xiang, Jiang Xueyin, Zhang Zhilin. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Journal of Semiconductors, 2007, 28(10): 1589-1593. ****
      Chen L, Zhu W Q, Bai Y, Liu X, Jiang X Y, Zhang Z L. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Chin. J. Semicond., 2007, 28(10): 1589.

      Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors

      • Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China

      • School of Material Science and Engineering,Shanghai University,Shanghai 201800,China

      • Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China

      • School of Material Science and Engineering,Shanghai University,Shanghai 201800,China

      • Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China

      • Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China

      • Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China

      • Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China

      • School of Material Science and Engineering,Shanghai University,Shanghai 201800,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-30
      • Revised Date: 2007-05-31
      • Published Date: 2007-09-26

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