Chin. J. Semicond. > 2007, Volume 28?>?Issue 10?> 1594-1598

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Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure

Liang Huilai, Guo Weilian, Song Ruiliang, Qi Haitao, Zhang Shilin, Hu Liuchang, Li Jianheng, Mao Luhong, Shang Yuehui, Feng Zhen, Tian Guoping and Li Yali

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Abstract: The design and fabrication of a resonant tunneling transistor with an RTD/HEMT in-series structure are presented.The measurement results of the fabricated devices show that the maximum peak valley current ratio (PVCR) is 17.6∶1,the gate voltage modulating peak voltage ratio is in the range of 1.5～7.7,and the -3dB cut-off frequency is about 4GHz.This device is compatible with HEMTs in the device structure and fabrication technology,and can be used in high speed circuits with HEMTs devices.

Key words: RTT, RTD, HEMT, transconductance cut off frequency, PVCR

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    Received: 18 August 2015 Revised: 12 June 2007 Online: Published: 01 October 2007

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      Liang Huilai, Guo Weilian, Song Ruiliang, Qi Haitao, Zhang Shilin, Hu Liuchang, Li Jianheng, Mao Luhong, Shang Yuehui, Feng Zhen, Tian Guoping, Li Yali. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Journal of Semiconductors, 2007, 28(10): 1594-1598. ****Liang H L, Guo W L, Song R L, Qi H T, Zhang S L, Hu L C, Li J H, Mao L H, Shang Y H, Feng Z, Tian G P, Li Y L. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Chin. J. Semicond., 2007, 28(10): 1594.
      Citation:
      Liang Huilai, Guo Weilian, Song Ruiliang, Qi Haitao, Zhang Shilin, Hu Liuchang, Li Jianheng, Mao Luhong, Shang Yuehui, Feng Zhen, Tian Guoping, Li Yali. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Journal of Semiconductors, 2007, 28(10): 1594-1598. ****
      Liang H L, Guo W L, Song R L, Qi H T, Zhang S L, Hu L C, Li J H, Mao L H, Shang Y H, Feng Z, Tian G P, Li Y L. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Chin. J. Semicond., 2007, 28(10): 1594.

      Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China

      • No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China

      • No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China

      • No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-27
      • Revised Date: 2007-06-12
      • Published Date: 2007-09-26

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