Chin. J. Semicond. > 1995, Volume 16?>?Issue 7?> 533-540

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2611 Times PDF downloads: 1478 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 July 1995

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      任迪遠，余學鋒，陸嫵，王國彬，張國強，范隆，嚴榮良. MOSFET電離輻射感生跨導退化的簡單模型[J]. 半導體學報(英文版), 1995, 16(7): 533-540.
      Citation:
      任迪遠，余學鋒，陸嫵，王國彬，張國強，范隆，嚴榮良. MOSFET電離輻射感生跨導退化的簡單模型[J]. 半導體學報(英文版), 1995, 16(7): 533-540.

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return