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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1369-1372

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Wafer Direct Bonding Based on UV Exposure

Ma Canghai, Liao Guanglan, Shi Tielin, Tang Zirong, Liu Shiyuan, Nie Lei and Lin Xiaohui

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Abstract: Wafer direct bonding technology has extensive application and broad prospects.UV activation combined with wet chemical cleaning in wafer direct bonding is investigated.An IR detection system,single tensile machine,and FSEM are employed to evaluate the bonding quality.The constant temperature and humility experiment,and the high and low temperature cycle experiment are also performed.It has been demonstrated that this approach can realize wafer direct bonding and enhance the bonding strength.A higher strength can be obtained by controlling the UV exposure time.The bonded wafer treated by constant temperature and humility and high and low temperature cycle can retain a higher bonding strength.Therefore,the process is effective for the wafer direct bonding and has great potential for application.

Key words: wafer direct bonding, UV exposure, bonding quality, reliability

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    Received: 18 August 2015 Revised: 09 January 2008 Online: Published: 01 July 2008

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      Ma Canghai, Liao Guanglan, Shi Tielin, Tang Zirong, Liu Shiyuan, Nie Lei, Lin Xiaohui. Wafer Direct Bonding Based on UV Exposure[J]. Journal of Semiconductors, 2008, 29(7): 1369-1372. ****Ma C H, Liao G L, Shi T L, Tang Z R, Liu S Y, Nie L, Lin X H. Wafer Direct Bonding Based on UV Exposure[J]. J. Semicond., 2008, 29(7): 1369.
      Citation:
      Ma Canghai, Liao Guanglan, Shi Tielin, Tang Zirong, Liu Shiyuan, Nie Lei, Lin Xiaohui. Wafer Direct Bonding Based on UV Exposure[J]. Journal of Semiconductors, 2008, 29(7): 1369-1372. ****
      Ma C H, Liao G L, Shi T L, Tang Z R, Liu S Y, Nie L, Lin X H. Wafer Direct Bonding Based on UV Exposure[J]. J. Semicond., 2008, 29(7): 1369.

      Wafer Direct Bonding Based on UV Exposure

      • Wuhan National Laboratory for Optoelectronics,State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science & Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science & Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science & Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science & Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science & Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science & Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science & Technology,Wuhan 430074,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-12-18
      • Revised Date: 2008-01-09
      • Published Date: 2008-08-01

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