Chin. J. Semicond. > 2007, Volume 28?>?Issue 9?> 1406-1410

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Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure

Shu Bin, Zhang Heming, Wang Qing, Huang Dapeng and Xuan Rongxi

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Abstract: Bi2O3-ZnO-Nb2O5 (BZN) film with a high dielectric constant,which can be used as a gate medium in GaN metal-insulator-semiconductor field effect transistors (MISFETs),was fabricated by the sol-gel technique.Process parameters such as raw material proportioning,sinter temperature,and heat preservation time were obtained.The problems of the dissolvability,viscosity,and soakage of the raw material were also solved.A GaN MIS structure with the BZN film was also fabricated;and from the measured C-Vcurve,εr of the BZN film was 91,and the reverse voltage and CFB of this MIS structure were -3.4 and -1.9V,respectively.

Key words: sol-gel, BZN film, MIS structure, C-V curve

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    Received: 18 August 2015 Revised: 13 April 2007 Online: Published: 01 September 2007

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      Shu Bin, Zhang Heming, Wang Qing, Huang Dapeng, Xuan Rongxi. Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure[J]. Journal of Semiconductors, 2007, 28(9): 1406-1410. ****Shu B, Zhang H M, Wang Q, Huang D P, Xuan R X. Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure[J]. Chin. J. Semicond., 2007, 28(9): 1406.
      Citation:
      Shu Bin, Zhang Heming, Wang Qing, Huang Dapeng, Xuan Rongxi. Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure[J]. Journal of Semiconductors, 2007, 28(9): 1406-1410. ****
      Shu B, Zhang H M, Wang Q, Huang D P, Xuan R X. Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure[J]. Chin. J. Semicond., 2007, 28(9): 1406.

      Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-27
      • Revised Date: 2007-04-13
      • Published Date: 2007-08-31

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