Chin. J. Semicond. > 2007, Volume 28?>?Issue 9?> 1411-1414

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Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy

Liu Linsheng, Wang Wenxin, Liu Su, Zhao Hongming, Liu Baoli, Jiang Zhongwei, Gao Hanchao, Wang Jia, Huang Qing’an, Chen Hong and Zhou Junming

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Abstract: A series of samples with different growth temperatures and different BEP ratios were grown on GaAs (110) substrates by molecular beam epitaxy.The samples were investigated via room temperature and low temperature photoluminescence spectra and high resolution X-ray diffraction.Then the optimized growth conditions of Al0.4Ga0.6As films on GaAs (110) substrates were found.

Key words: molecular beam epitaxy, GaAs substrate, AlGaAs

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    Received: 18 August 2015 Revised: 27 March 2007 Online: Published: 01 September 2007

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      Liu Linsheng, Wang Wenxin, Liu Su, Zhao Hongming, Liu Baoli, Jiang Zhongwei, Gao Hanchao, Wang Jia, Huang Qing’an, Chen Hong, Zhou Junming. Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(9): 1411-1414. ****Liu L S, Wang W X, Liu S, Zhao H, Liu B L, Jiang Z W, Gao H C, Wang J, Huang Q, Chen H, Zhou J M. Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(9): 1411.
      Citation:
      Liu Linsheng, Wang Wenxin, Liu Su, Zhao Hongming, Liu Baoli, Jiang Zhongwei, Gao Hanchao, Wang Jia, Huang Qing’an, Chen Hong, Zhou Junming. Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(9): 1411-1414. ****
      Liu L S, Wang W X, Liu S, Zhao H, Liu B L, Jiang Z W, Gao H C, Wang J, Huang Q, Chen H, Zhou J M. Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(9): 1411.

      Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy

      • School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • MEMS Key Laboratory of the Ministry of Educati

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • MEMS Key Laboratory of the Ministry of Education,Southeast University,Nanjing 210096,China

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-06
      • Revised Date: 2007-03-27
      • Published Date: 2007-08-31

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