Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 69-72

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Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Chen Jiezhi, Shi Yi, Pu Lin, Long Shibing, Liu Ming and Zheng Youdou

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Abstract: To enhance the coupling strength between the gate and the quantum dot (QD) confined in the transport channel and improve the gain modulation factor,we develop a novel type of Si single-electron transistor (SET).Clear coulomb blockade oscillations and negative differential conductance (NDC) are observed at room temperature (RT).Based on the model of quantized energy levels of QDs,we analyze the transport mechanism of the fabricated devices,especially the effect of strong gate-dot coupling on the transport characteristics.The results demonstrate that 7.6nm QDs and a large gain modulation factor of 0.84 by controlling the thermal oxidation are achieved.

Key words: single-electron transistor, coulomb blockade, coulomb oscillations, NDC

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    Received: 18 August 2015 Revised: 27 August 2006 Online: Published: 01 January 2007

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      Chen Jiezhi, Shi Yi, Pu Lin, Long Shibing, Liu Ming, Zheng Youdou. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Journal of Semiconductors, 2007, 28(1): 69-72. ****Chen J Z, Shi Y, Pu L, Long S B, Liu M, Zheng Y D. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Chin. J. Semicond., 2007, 28(1): 69.
      Citation:
      Chen Jiezhi, Shi Yi, Pu Lin, Long Shibing, Liu Ming, Zheng Youdou. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Journal of Semiconductors, 2007, 28(1): 69-72. ****
      Chen J Z, Shi Y, Pu L, Long S B, Liu M, Zheng Y D. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Chin. J. Semicond., 2007, 28(1): 69.

      Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-05
      • Revised Date: 2006-08-27
      • Published Date: 2006-12-26

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