Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 73-77

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Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT

Ma Xiangbai, Zhang Jincheng, Guo Liangliang, Feng Qian and Hao Yue

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Abstract: Due to the geometry and polarization of AlGaN/GaN HEMTs, the electric field in the gate-drain region is very high, and is sufficient to produce a tunneling current from the gate metal to the surface of the AlGaN barrier layer. The electrons that tunnel to the semiconductor surface can accumulate on the surface near the gate, resulting in the extension of the depletion region and current collapse. Bias stress measurements were made to determine an AlGaN/GaN HEMT's current collapse. Surface passivation prevents the electrons from getting trapped at the surface, and a field plate suppresses the electric field at the gate edge, thereby reducing the gate leakage by a significant factor. Thus the current collapse can be effectively suppressed by surface passivation and the field-plate structure.

Key words: current collapse,  passivation,  field-plate

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    Received: 18 August 2015 Revised: 24 August 2006 Online: Published: 01 January 2007

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      Ma Xiangbai, Zhang Jincheng, Guo Liangliang, Feng Qian, Hao Yue. Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2007, 28(1): 73-77. ****Ma X B, Zhang J C, Guo L L, Feng Q, Hao Y. Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT[J]. Chin. J. Semicond., 2007, 28(1): 73.
      Citation:
      Ma Xiangbai, Zhang Jincheng, Guo Liangliang, Feng Qian, Hao Yue. Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2007, 28(1): 73-77. ****
      Ma X B, Zhang J C, Guo L L, Feng Q, Hao Y. Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT[J]. Chin. J. Semicond., 2007, 28(1): 73.

      Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT

      • Microelectronics School, Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi’an 710071, China

      • Microelectronics School, Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi’an 710071, China

      • Microelectronics School, Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi’an 710071, China

      • Microelectronics School, Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi’an 710071, China

      • Microelectronics School, Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi’an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-25
      • Revised Date: 2006-08-24
      • Published Date: 2006-12-26

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