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Chin. J. Semicond. > 1994, Volume 15?>?Issue 4?> 277-284

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MOS結(jié)構(gòu)低溫負偏壓溫度不穩(wěn)定性

陸德仁，朱德光

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    Received: 18 August 2015 Revised: Online: Published: 01 April 1994

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      陸德仁，朱德光. MOS結(jié)構(gòu)低溫負偏壓溫度不穩(wěn)定性[J]. 半導體學報(英文版), 1994, 15(4): 277-284.
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      陸德仁，朱德光. MOS結(jié)構(gòu)低溫負偏壓溫度不穩(wěn)定性[J]. 半導體學報(英文版), 1994, 15(4): 277-284.

      • Received Date: 2015-08-18

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