Chin. J. Semicond. > 1996, Volume 17?>?Issue 1?> 1-5

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1996

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      盛篪，周鐵城，龔大衛，樊永良，王建寶，張翔九，王迅. 在Ge和SiGe復合緩沖層上生長高質量Ge／Si超晶格[J]. 半導體學報(英文版), 1996, 17(1): 1-5.
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      盛篪，周鐵城，龔大衛，樊永良，王建寶，張翔九，王迅. 在Ge和SiGe復合緩沖層上生長高質量Ge／Si超晶格[J]. 半導體學報(英文版), 1996, 17(1): 1-5.

      • Received Date: 2015-08-18

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