Chin. J. Semicond. > 2007, Volume 28?>?Issue 5?> 737-740

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Design,Fabrication,and Analysis of a Resonant Tunneling Diode

Zhang Lei, Yang Ruixia, Wu Yibin, Shang Yaohui and Gao Jinhuan

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Abstract: AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy.By improving on material growth design and process design,the maximum PVCR of the RTD has reached 2.4,and the density of the peak current has reached 36.8kA/cm2.The parameters and I-V characteristics of the RTD have been measured,and the effects of quantum well width and thickness of the cap layer on the RTD I-V characteristics are analyzed.

Key words: resonant tunneling diode, I-V characteristics, peak to valley current ratio, negative differential resistance

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    Received: 18 August 2015 Revised: 17 January 2007 Online: Published: 01 May 2007

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      Zhang Lei, Yang Ruixia, Wu Yibin, Shang Yaohui, Gao Jinhuan. Design,Fabrication,and Analysis of a Resonant Tunneling Diode[J]. Journal of Semiconductors, 2007, 28(5): 737-740. ****Zhang L, Yang R X, Wu Y B, Shang Y H, Gao J H. Design,Fabrication,and Analysis of a Resonant Tunneling Diode[J]. Chin. J. Semicond., 2007, 28(5): 737.
      Citation:
      Zhang Lei, Yang Ruixia, Wu Yibin, Shang Yaohui, Gao Jinhuan. Design,Fabrication,and Analysis of a Resonant Tunneling Diode[J]. Journal of Semiconductors, 2007, 28(5): 737-740. ****
      Zhang L, Yang R X, Wu Y B, Shang Y H, Gao J H. Design,Fabrication,and Analysis of a Resonant Tunneling Diode[J]. Chin. J. Semicond., 2007, 28(5): 737.

      Design,Fabrication,and Analysis of a Resonant Tunneling Diode

      • HeiBei University of Technology,Tianjin 300130,China

      • HeiBei University of Technology,Tianjin 300130,China

      • The 13th Research Institute,China Electronics Technology Group Corporation, Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation, Shijiazhuang 050051,China

      • HeiBei University of Technology,Tianjin 300130,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-10-11
      • Revised Date: 2007-01-17
      • Published Date: 2007-04-29

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