Chin. J. Semicond. > 2007, Volume 28?>?Issue 2?> 265-268

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Fabrication and Characteristics of Nano-Aperture Vertical-Cavity Surface-Emitting Laser

Gao Jianxia, Song Guofeng, Gan Qiaoqiang, Xu Yun, Guo Baoshan and Chen Lianghui

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Abstract: Nano-aperture vertical-cavity surface-emitting lasers were fabricated on common 850nm VCSELs.When the size of the aperture was 400nm×400nm,the maximum far-field output power reached 0.3mW at a driving current of 25mA,and the power density was about 2mW/μm2.The fabrication process is introduced here.Spectra and lifetime characteristics of the devices are also analyzed.

Key words: near-field optics, nano-aperture VCSEL, output power, optical characteristics

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    Received: 18 August 2015 Revised: 31 August 2006 Online: Published: 01 February 2007

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      Gao Jianxia, Song Guofeng, Gan Qiaoqiang, Xu Yun, Guo Baoshan, Chen Lianghui. Fabrication and Characteristics of Nano-Aperture Vertical-Cavity Surface-Emitting Laser[J]. Journal of Semiconductors, 2007, 28(2): 265-268. ****Gao J X, Song G F, Gan Q Q, Xu Y, Guo B S, Chen L H. Fabrication and Characteristics of Nano-Aperture Vertical-Cavity Surface-Emitting Laser[J]. Chin. J. Semicond., 2007, 28(2): 265.
      Citation:
      Gao Jianxia, Song Guofeng, Gan Qiaoqiang, Xu Yun, Guo Baoshan, Chen Lianghui. Fabrication and Characteristics of Nano-Aperture Vertical-Cavity Surface-Emitting Laser[J]. Journal of Semiconductors, 2007, 28(2): 265-268. ****
      Gao J X, Song G F, Gan Q Q, Xu Y, Guo B S, Chen L H. Fabrication and Characteristics of Nano-Aperture Vertical-Cavity Surface-Emitting Laser[J]. Chin. J. Semicond., 2007, 28(2): 265.

      Fabrication and Characteristics of Nano-Aperture Vertical-Cavity Surface-Emitting Laser

      • Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-16
      • Revised Date: 2006-08-31
      • Published Date: 2007-01-30

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