Abstract: A VDMOS integrated in a 170V scan-driver chip of a plasma display panel (PDP) is described,which is based on epitaxial bipolar-CMOS-DMOS (BCD) technology.Some key considerations and parameters of the design are discussed.The thickness of epitaxial layer is 17μm,the area of a single VDMOS structure cell is 324μm2,and only 18 photoetching steps are needed in the development process.It is also compatible with standard CMOS,bipolar,and p-LDMOS devices.The breakdown voltage of VDMOS in the process control module (PCM) is more than 200V.Five kinds of VDMOS modules are integrated in 64 channel PDP scan-driver IC,and on-line system verification is done on a LG-model-42v6 PDP.

Key words: PDP,  VDMOS,  BCD process,  cost-effective,  structure cell