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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1407-1411

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Temperature Dependence of Digital Single Event Transient

Liang Bin, Chen Shuming and Liu Biwei

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Abstract: Using mixed-mode simulation,the temperature dependence of digital single event transient (DSET)in an inverter chain has been studied.It was found that the temperature dependence of DSET is much more serious than that of SEU.When the temperature rises from -55 to 125℃,the width of DSET increases about 58.8%.

Key words: mixed-mode simulationDSETvery deep sub-micronradiation

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    Received: 18 August 2015 Revised: 09 January 2008 Online: Published: 01 July 2008

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      Liang Bin, Chen Shuming, Liu Biwei. Temperature Dependence of Digital Single Event Transient[J]. Journal of Semiconductors, 2008, 29(7): 1407-1411. ****Liang B, Chen S M, Liu B W. Temperature Dependence of Digital Single Event Transient[J]. J. Semicond., 2008, 29(7): 1407.
      Citation:
      Liang Bin, Chen Shuming, Liu Biwei. Temperature Dependence of Digital Single Event Transient[J]. Journal of Semiconductors, 2008, 29(7): 1407-1411. ****
      Liang B, Chen S M, Liu B W. Temperature Dependence of Digital Single Event Transient[J]. J. Semicond., 2008, 29(7): 1407.

      Temperature Dependence of Digital Single Event Transient

      • Received Date: 2015-08-18
      • Accepted Date: 2007-12-25
      • Revised Date: 2008-01-09
      • Published Date: 2008-08-01

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