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J. Semicond. > 2008, Volume 29?>?Issue 5?> 954-959

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Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress

Yang Zhenyu, Wang Mingxiang and Wang Huaisheng

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Abstract: The temperature distribution of typical-sized n-type polycrystalline silicon thin film transistors under self-heating (SH) stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density,substrate material,and channel width on temperature distribution is analyzed.This study is useful for understanding the mechanism of self-heating degradation,and to find approaches to effectively alleviate the SH effect in device operation.

Key words: FEA, temperature distribution, thin film transistor, self-heating degradation, steady-state and transient simulation

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    Received: 18 August 2015 Revised: 01 December 2007 Online: Published: 01 May 2008

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      Yang Zhenyu, Wang Mingxiang, Wang Huaisheng. Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress[J]. Journal of Semiconductors, 2008, 29(5): 954-959. ****Yang Z Y, Wang M X, Wang H S. Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress[J]. J. Semicond., 2008, 29(5): 954.
      Citation:
      Yang Zhenyu, Wang Mingxiang, Wang Huaisheng. Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress[J]. Journal of Semiconductors, 2008, 29(5): 954-959. ****
      Yang Z Y, Wang M X, Wang H S. Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress[J]. J. Semicond., 2008, 29(5): 954.

      Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress

      • Department of Microelectronics,Soochow University,Suzhou 215021,China

      • Department of Microelectronics,Soochow University,Suzhou 215021,China

      • Department of Microelectronics,Soochow University,Suzhou 215021,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-30
      • Revised Date: 2007-12-01
      • Published Date: 2008-05-05

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