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J. Semicond. > 2019, Volume 40?>?Issue 8?> 080204

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Controlling magnetism in 2D CrI3 by electrostatic doping

Zheng Han

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DOI: 10.1088/1674-4926/40/8/080204

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    Received: Revised: Online: Published: 09 August 2019

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      Zheng Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. Journal of Semiconductors, 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204 ****Z Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. J. Semicond., 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204.
      Citation:
      Zheng Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. Journal of Semiconductors, 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204 ****
      Z Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. J. Semicond., 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204.

      Controlling magnetism in 2D CrI3 by electrostatic doping

      DOI: 10.1088/1674-4926/40/8/080204

      • Institute of Metal Research, CAS, Shenyang, China

      • Published Date: 2019-08-01

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