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J. Semicond. > 2019, Volume 40?>?Issue 2?> 020401

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A novel spin-FET based on 2D antiferromagnet

Jianlu Wang

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 Corresponding author: Jianlu Wang, Email: jlwang@mail.sitp.ac.cn

DOI: 10.1088/1674-4926/40/2/020401

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[1]
Gong C, Li L, Li Z, et al. Discovery of intrinsic ferromagnetism in two-dimensional vander Waals crystals. Nature, 2017, 546, 265 doi: 10.1038/nature22060
[2]
Gong S, Gong C, Sun Y, et al. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors. PNAS, 2018, 115(34), 8511 doi: 10.1073/pnas.1715465115
[3]
Datta S, Das B. Electronic analog of the electro-optic modulator. Appl Phys Lett, 1990, 56, 665 doi: 10.1063/1.102730
Fig. 1.  (Color online) (a) Schematic view of the A-type antiferromagnetic bilayer system with the perpendicular electric field shown in blue (positve) and red (negative). (b?d) The schematic spin- and layer-resolved density of states of the A-type antiferromagnetic bilayer system with the electric field normal to the van der Waals plane (b) E = 0 and (c) (d) E = Ec (Ec is the critical electric field for the emergence of half metallicity), in which 1-α(β) and 2-α(β) indicate the spin-α(β) channel in layer 1 and layer 2, respectively. The positive(negative) electric field induces the spin-α(β) electrons around the Fermi level. (e) The proposed spin field effect transistor model, in which the spin states in the channel are tuned by the gate voltage[2].

[1]
Gong C, Li L, Li Z, et al. Discovery of intrinsic ferromagnetism in two-dimensional vander Waals crystals. Nature, 2017, 546, 265 doi: 10.1038/nature22060
[2]
Gong S, Gong C, Sun Y, et al. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors. PNAS, 2018, 115(34), 8511 doi: 10.1073/pnas.1715465115
[3]
Datta S, Das B. Electronic analog of the electro-optic modulator. Appl Phys Lett, 1990, 56, 665 doi: 10.1063/1.102730

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    Received: Revised: Online: Accepted Manuscript: 16 January 2019Uncorrected proof: 17 January 2019Published: 01 February 2019

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      Jianlu Wang. A novel spin-FET based on 2D antiferromagnet[J]. Journal of Semiconductors, 2019, 40(2): 020401. doi: 10.1088/1674-4926/40/2/020401 ****J L Wang, A novel spin-FET based on 2D antiferromagnet[J]. J. Semicond., 2019, 40(2): 020401. doi: 10.1088/1674-4926/40/2/020401.
      Citation:
      Jianlu Wang. A novel spin-FET based on 2D antiferromagnet[J]. Journal of Semiconductors, 2019, 40(2): 020401. doi: 10.1088/1674-4926/40/2/020401 ****
      J L Wang, A novel spin-FET based on 2D antiferromagnet[J]. J. Semicond., 2019, 40(2): 020401. doi: 10.1088/1674-4926/40/2/020401.

      A novel spin-FET based on 2D antiferromagnet

      DOI: 10.1088/1674-4926/40/2/020401

      • National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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