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J. Semicond. > 2017, Volume 38?>?Issue 7?> 074008

SEMICONDUCTOR DEVICES

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

Xiaofeng Zhao, Dandan Li, Yang Yu and Dianzhong Wen

+ Author Affiliations

 Corresponding author: Xiaofeng Zhao, E-mail:zhaoxiaofeng@hlju.edu.cn

DOI: 10.1088/1674-4926/38/7/074008

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Abstract: Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors (R1, R2, R3 and R4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r1 and r2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.

Key words: SOI pressure sensor, asymmetric base region transistor, temperature compensation, temperature coefficient of the sensitivity, MEMS technology



[1]
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[2]
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[3]
Andrea G L, Lionello D, Domenico A, et al. SOI-based, high reliable pressure sensor with floating concept for high temperature applications. Procedia Eng, 2014, 87: 720 doi: 10.1016/j.proeng.2014.11.639
[4]
Zhao X F, Yu Y, Li D S, et al. Design, fabrication and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin film transistors. AIP Adv, 2015, 5(12): 127216 doi: 10.1063/1.4938517
[5]
Chen T, Zhang Z H, Ren T L, et al. A novel dual-functional MEMS sensor integrating both pressure and temperature units. J Semicond, 2010, 31(7): 074013 doi: 10.1088/1674-4926/31/7/074013
[6]
Zhou G W, Zhao Y L, Guo F F, et al. A smart high accuracy silicon piezoresistive pressure sensor temperature compensation system. Sensors, 2014, 14: 12174 doi: 10.3390/s140712174
[7]
Peng X J, Yang K T, Yuan X H. A novel pressure sensor calibration system based on a neural network. J Semicond, 2015, 36(9): 095004 doi: 10.1088/1674-4926/36/9/095004
[8]
Zheng B R, Xue W, Zhou C, et al. Sensitivity temperature coefficient compensation based on pressure sensor integrated constant current. Chin Mechan Eng, 2010, 21(7): 800 http://en.cnki.com.cn/Article_en/CJFDTOTAL-ZGJX201007009.htm
[9]
Hsieh C C, Hung C C, Li Y H. Investigation of a pressure sensor with temperature compensation using two concentric wheatstone-bridge circuits. Modern Mechan Eng, 2013, 3: 104 doi: 10.4236/mme.2013.32015
[10]
Aryafar M, Hamedi M, Ganjeh M M. A novel temperature compensated piezoresistive pressure sensor. Measurement, 2015, 63: 25 doi: 10.1016/j.measurement.2014.11.032
[11]
Li S N, Liang T, Wang W, et al. A novel SOI pressure sensor for high temperature application. J Semicond, 2015, 36(1): 014014 doi: 10.1088/1674-4926/36/1/014014
[12]
Kumar G, Raman A. Pressure sensor based on MEMS nano-cantilever beam structure as a heterodielectric gate electrode of dopingless TFET. Superlattices Microstruct, 2016, 100: 535 doi: 10.1016/j.spmi.2016.10.010
[13]
Liu X, Yao Y, Ma J H, et al. Micro packaged MEMS pressure sensor for intracranial pressure measurement. J Semicond, 2015, 36(6): 064009 doi: 10.1088/1674-4926/36/6/064009
[14]
Wen D Z, Zhao X F. Sensor principle and its application. Beijing: Science Press, 2013
[15]
Zhao X F, Wen D Z, Li G. Fabrication and characteristics of the nc-Si/c-Si heterojunction MOSFETs pressure sensor. Sensors, 2012, 12(5): 6369 http://www.oalib.com/paper/170945
[16]
Zhao X F, Wen D Z. Fabrication and characteristics of a nano-polysilicon thin film pressure sensor. J Semicond, 2008, 29(10): 2038 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX200810037.htm
Fig. 1.  (Color online) The basic structure of SOI integrated pressure sensor with temperature compensation circuit. (a) The basic structure. (b) The asymmetric base region transistor.

Fig. 2.  (Color online) The operating principle schematic diagram. (a) Equivalent circuit of the pressure sensor. (b) Circuit of asymmetric base region transistor.

Fig. 3.  (Color online) The main fabrication technology process of SOI integrated pressure sensor.

Fig. 4.  The photographs of the sensor. (a) The sensor bonded on the borosilicate glass. (b) The C-type cup. (c) The packaged chip.

Fig. 5.  The fitting straight lines and experimental curves of inputoutput characteristics for the pressure sensor.

Fig. 6.  The input–output characteristic curves of the pressure sensor at different temperature. (a) Before temperature compensation. (b) After temperature compensation.

Fig. 7.  The sensitivity of the pressure sensor with different ratios of asymmetric base region resistances.

Table 1.   The characteristics parameter of the pressure sensor.
[1]
Bogdan B, Laurent M, Panagiota M. SOI built-in heat spreader with temperature and pressure integrated sensors for cooling optimization and in situ monitoring. Mater Sci Eng B, 2011, 176: 305 doi: 10.1016/j.mseb.2010.10.004
[2]
Zhang Z H, Ren T L, Zhang Y H, et al. Low power and high sensitivity MOSFET-based pressure sensor. Chin Phys Lett, 2012, 29(8): 088501 doi: 10.1088/0256-307X/29/8/088501
[3]
Andrea G L, Lionello D, Domenico A, et al. SOI-based, high reliable pressure sensor with floating concept for high temperature applications. Procedia Eng, 2014, 87: 720 doi: 10.1016/j.proeng.2014.11.639
[4]
Zhao X F, Yu Y, Li D S, et al. Design, fabrication and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin film transistors. AIP Adv, 2015, 5(12): 127216 doi: 10.1063/1.4938517
[5]
Chen T, Zhang Z H, Ren T L, et al. A novel dual-functional MEMS sensor integrating both pressure and temperature units. J Semicond, 2010, 31(7): 074013 doi: 10.1088/1674-4926/31/7/074013
[6]
Zhou G W, Zhao Y L, Guo F F, et al. A smart high accuracy silicon piezoresistive pressure sensor temperature compensation system. Sensors, 2014, 14: 12174 doi: 10.3390/s140712174
[7]
Peng X J, Yang K T, Yuan X H. A novel pressure sensor calibration system based on a neural network. J Semicond, 2015, 36(9): 095004 doi: 10.1088/1674-4926/36/9/095004
[8]
Zheng B R, Xue W, Zhou C, et al. Sensitivity temperature coefficient compensation based on pressure sensor integrated constant current. Chin Mechan Eng, 2010, 21(7): 800 http://en.cnki.com.cn/Article_en/CJFDTOTAL-ZGJX201007009.htm
[9]
Hsieh C C, Hung C C, Li Y H. Investigation of a pressure sensor with temperature compensation using two concentric wheatstone-bridge circuits. Modern Mechan Eng, 2013, 3: 104 doi: 10.4236/mme.2013.32015
[10]
Aryafar M, Hamedi M, Ganjeh M M. A novel temperature compensated piezoresistive pressure sensor. Measurement, 2015, 63: 25 doi: 10.1016/j.measurement.2014.11.032
[11]
Li S N, Liang T, Wang W, et al. A novel SOI pressure sensor for high temperature application. J Semicond, 2015, 36(1): 014014 doi: 10.1088/1674-4926/36/1/014014
[12]
Kumar G, Raman A. Pressure sensor based on MEMS nano-cantilever beam structure as a heterodielectric gate electrode of dopingless TFET. Superlattices Microstruct, 2016, 100: 535 doi: 10.1016/j.spmi.2016.10.010
[13]
Liu X, Yao Y, Ma J H, et al. Micro packaged MEMS pressure sensor for intracranial pressure measurement. J Semicond, 2015, 36(6): 064009 doi: 10.1088/1674-4926/36/6/064009
[14]
Wen D Z, Zhao X F. Sensor principle and its application. Beijing: Science Press, 2013
[15]
Zhao X F, Wen D Z, Li G. Fabrication and characteristics of the nc-Si/c-Si heterojunction MOSFETs pressure sensor. Sensors, 2012, 12(5): 6369 http://www.oalib.com/paper/170945
[16]
Zhao X F, Wen D Z. Fabrication and characteristics of a nano-polysilicon thin film pressure sensor. J Semicond, 2008, 29(10): 2038 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX200810037.htm

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    Received: 05 December 2016 Revised: 08 January 2017 Online: Published: 01 July 2017

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      Xiaofeng Zhao, Dandan Li, Yang Yu, Dianzhong Wen. Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor[J]. Journal of Semiconductors, 2017, 38(7): 074008. doi: 10.1088/1674-4926/38/7/074008 ****X F Zhao, Dandan Li and A Li, Y Yu, D Z Wen. Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor[J]. J. Semicond., 2017, 38(7): 074008. doi: 10.1088/1674-4926/38/7/074008.
      Citation:
      Xiaofeng Zhao, Dandan Li, Yang Yu, Dianzhong Wen. Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor[J]. Journal of Semiconductors, 2017, 38(7): 074008. doi: 10.1088/1674-4926/38/7/074008 ****
      X F Zhao, Dandan Li and A Li, Y Yu, D Z Wen. Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor[J]. J. Semicond., 2017, 38(7): 074008. doi: 10.1088/1674-4926/38/7/074008.

      Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

      DOI: 10.1088/1674-4926/38/7/074008

      • Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China

      Funds:

      the National Natural Science Foundation of China 61471159

      the Natural Science Foundation of Heilongjiang Province F201433

      the Special Funds for Science and Technology Innovation Talents of Harbin in China 2016RAXXJ016

      the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Provinc 2015018

      Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016)

      More Information
      • Corresponding author: Xiaofeng Zhao, E-mail:zhaoxiaofeng@hlju.edu.cn
      • Received Date: 2016-12-05
      • Revised Date: 2017-01-08
      • Published Date: 2017-07-01

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