J. Semicond. > 2016, Volume 37?>?Issue 7?> 074003

SEMICONDUCTOR DEVICES

fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm

Qing Wang1, 2, Peng Ding2, Yongbo Su2, Wuchang Ding1, 2, Muhammad Asif5, Wu Tang2 and Zhi Jin2

+ Author Affiliations

 Corresponding author: Zhi Jin, Email: jinzhi@ime.ac.cn

DOI: 10.1088/1674-4926/37/7/074003

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Abstract: The 100-nm T-gate InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with the width of 2×50 μm and source-drain space of 2.4 μm are systematically investigated. High indium (In) composition of InGaAs layer was adopted to acquire the higher mobility of the channel layer. A sandwich structure was adopted to optimize the cap layers and produce a very low contact resistance. The fabricated devices exhibit extrinsic maximum transconductance Gm.max=1441 mS/mm, cutoff frequency fT=260 GHz, and maximum oscillation frequency fmax=607 GHz. A semi-empirical model has been developed to precisely fit the low-frequency region of scattering parameters (S parameters) for InP-based HEMTs. Excellent agreement between measured and simulated S parameters demonstrates the validity of this approach.

Key words: high electron mobility transistor, InGaAs layer, semi-empirical model



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.  (a) The cross-sectional schematic diagram of the InP-based HEMT. (b) The cross-sectional schematic diagram of the cap layer.


.  SEM photograph of the InP-based HEMT (2 × 50 μm).


.  SEM photograph of the 100 nm T-gate.


.  DC characteristics of the InP-based HEMT.


.  Transfer characteristics of the InP-based HEMT.


.  The H21 and MAG versus frequency of the HEMT.


.  The fmax of the InP-based HEMT versus bias including Vgs and Vds.


.  The small signal equivalent circuit model of the InP-based HEMT.


.  Comparison of the model (red line) and measured (black line) S parameters from 100 MHz to 40 GHz at Vds D 1.0 V and Vgs D 0.4 V. (a) Model S11 and measured S11. (b) Model S12 and measured S12. (c) Model S21 and measured S21. (d) Model S22 and measured S22.


.  (Color online) Comparison of the S parameters between the measure data (black circle line) and two model data (one for the traditional model: blue triangle line; another for the new model: red square line) from 100 MHz to 40 GHz at Vds D 1.0 V and Vgs D 0.4 V. (a) Two model S11 and measured S11. (b) Two model S12 and measured S12. (c) Two model S21 and measured S21. (d) Two model S22 and measured S22.


.   Comparison with published InP HEMTs with gate length of 100 nm.

.   Comparison of error function for the traditional model and the new model, respectively.

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    Received: 29 December 2015 Revised: Online: Published: 01 July 2016

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      Qing Wang, Peng Ding, Yongbo Su, Wuchang Ding, Muhammad Asif, Wu Tang, Zhi Jin. fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm[J]. Journal of Semiconductors, 2016, 37(7): 074003. doi: 10.1088/1674-4926/37/7/074003 ****Q Wang, P Ding, Y B Su, W C Ding, M Asif, W Tang, Z Jin. fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm[J]. J. Semicond., 2016, 37(7): 074003. doi: 10.1088/1674-4926/37/7/074003.
      Citation:
      Qing Wang, Peng Ding, Yongbo Su, Wuchang Ding, Muhammad Asif, Wu Tang, Zhi Jin. fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm[J]. Journal of Semiconductors, 2016, 37(7): 074003. doi: 10.1088/1674-4926/37/7/074003 ****
      Q Wang, P Ding, Y B Su, W C Ding, M Asif, W Tang, Z Jin. fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm[J]. J. Semicond., 2016, 37(7): 074003. doi: 10.1088/1674-4926/37/7/074003.

      fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm

      DOI: 10.1088/1674-4926/37/7/074003

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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      • Corresponding author: Email: jinzhi@ime.ac.cn
      • Received Date: 2015-12-29
      • Accepted Date: 2016-02-20
      • Published Date: 2016-07-25

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