J. Semicond. > 2016, Volume 37?>?Issue 7?> 074001

SEMICONDUCTOR DEVICES

Modeling and simulation of carbon nanotube field effect transistor and its circuit application

Amandeep Singh, Dinesh Kumar Saini, Dinesh Agarwal, Sajal Aggarwal, Mamta Khosla and Balwinder Raj

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Abstract: The carbon nanotube field effect transistor (CNTFET) is modelled for circuit application. The model is based on the transport mechanism and it directly relates the transport mechanism with the chirality. Also, it does not consider self consistent equations and thus is used to develop the HSPICE compatible circuit model. For validation of the model, it is applied to the top gate CNTFET structure and the MATLAB simulation results are compared with the simulations of a similar structure created in NanoTCAD ViDES. For demonstrating the circuit compatibility of the model, two circuits viz. inverter and SRAM are designed and simulated in HSPICE. Finally, SRAM performance metrics are compared with those of device simulations from NanoTCAD ViDES.

Key words: carbon nanotube, CNTFET, SRAM, HSPICE, NanoTCAD ViDES



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International Technology Roadmap for Semiconductors (ITRS). 2013 edition. Emerging Research Devices Summary. http://public. itrs. net/ITRS% 2019992014% 20Mtgs% 20 Presentations% 20&% 20Links/2013ITRS/2013 Chapters/2013 ERD Summary. pdf
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User Manual Stanford University CNTFET Model. https://nano.stanford.edu/stanford-cnfet-model-hspice
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Fiori G, Iannaccone G. NanoTCAD ViDES, 2008. http://vides.nanotcad.com/vides
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User Manual, NanoTCAD ViDES, 2008(http://vides. nanotcad. com/vides/documentation/commands-5/dope reservoir)
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Streetman B, Sanjay B. Solid state electronics devices. 6th ed. India:Prentice Hall, 2000, 4:89
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.  Band shift with gate bias at high drain bias[8].


.  Top gated CNTFET structure.


.  Quantum capacitance model[8].


.  ψcnt–VGS for different diameters.


.  (a) IDS–VDS characteristics for different VGS. (b) IDS–VGS characteristics for different VDS.


.  IDS–VDS characteristics for (a) different diameters, (b) different oxide thicknesses at VGS=0.4 V.


.  VTC of inverter at VDS = 1 V.


.  6T SRAM structure. (a) CMOS. (b) CNTFET.


.  SNM of SRAM cell. (a) Model. (b) NanoTCAD ViDES.


.   Device parameters used for simulations.

[1]
International Technology Roadmap for Semiconductors (ITRS). 2013 edition. Emerging Research Devices Summary. http://public. itrs. net/ITRS% 2019992014% 20Mtgs% 20 Presentations% 20&% 20Links/2013ITRS/2013 Chapters/2013 ERD Summary. pdf
[2]
User Manual Stanford University CNTFET Model. https://nano.stanford.edu/stanford-cnfet-model-hspice
[3]
[4]
[5]
[6]
[7]
Fiori G, Iannaccone G. NanoTCAD ViDES, 2008. http://vides.nanotcad.com/vides
[8]
[9]
[10]
[11]
User Manual, NanoTCAD ViDES, 2008(http://vides. nanotcad. com/vides/documentation/commands-5/dope reservoir)
[12]
[13]
[14]
Streetman B, Sanjay B. Solid state electronics devices. 6th ed. India:Prentice Hall, 2000, 4:89
[15]
[16]
[17]
[18]
http://www.intechopen. com/books/howtore ference/carbon-nanotubes/fundamental-physical-aspects-of-carbon-nanotube-transistors
[19]
http://www.techconnectworld. com/Microtech 2011/program/pdf/WCM2011-HAbebe.pdf
[20]
[21]
[22]
[23]
[24]

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    Received: 22 September 2015 Revised: Online: Published: 01 July 2016

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      Amandeep Singh, Dinesh Kumar Saini, Dinesh Agarwal, Sajal Aggarwal, Mamta Khosla, Balwinder Raj. Modeling and simulation of carbon nanotube field effect transistor and its circuit application[J]. Journal of Semiconductors, 2016, 37(7): 074001. doi: 10.1088/1674-4926/37/7/074001 ****A m and E Singh, D K Saini, D Agarwal, S Aggarwal, M Khosla, B Raj. Modeling and simulation of carbon nanotube field effect transistor and its circuit application[J]. J. Semicond., 2016, 37(7): 074001. doi: 10.1088/1674-4926/37/7/074001.
      Citation:
      Amandeep Singh, Dinesh Kumar Saini, Dinesh Agarwal, Sajal Aggarwal, Mamta Khosla, Balwinder Raj. Modeling and simulation of carbon nanotube field effect transistor and its circuit application[J]. Journal of Semiconductors, 2016, 37(7): 074001. doi: 10.1088/1674-4926/37/7/074001 ****
      A m and E Singh, D K Saini, D Agarwal, S Aggarwal, M Khosla, B Raj. Modeling and simulation of carbon nanotube field effect transistor and its circuit application[J]. J. Semicond., 2016, 37(7): 074001. doi: 10.1088/1674-4926/37/7/074001.

      Modeling and simulation of carbon nanotube field effect transistor and its circuit application

      DOI: 10.1088/1674-4926/37/7/074001
      More Information
      • Corresponding author: Amandeep Singh,Email: amandeepsingh.ec.13@nitj.ac.in
      • Received Date: 2015-09-22
      • Accepted Date: 2015-12-27
      • Published Date: 2016-07-25

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