J. Semicond. > 2016, Volume 37?>?Issue 7?> 073001

SEMICONDUCTOR MATERIALS

Influence of GaInP ordering on the performance of GaInP solar cells

Yurun Sun1, , Kuilong Li1 and Xulu Zeng1, 2

+ Author Affiliations

 Corresponding author: Yu Shuzhen, Email: szyu2010@sinano.ac.cn

DOI: 10.1088/1674-4926/37/7/073001

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Abstract: CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room-temperature and low-temperature photoluminescence (PL) spectra of AlGaInP/GaInP/AlGaInP double heterostructures (DHs) reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/Ⅲ ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.

Key words: MOCVD, GaInP, ordering, solar cell



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Sasaki K, Agui T, Nakaido K, et al. Development of InGaP/GaAs inverted triple junction concentrator solar cells. Proceedings of 9th International Conference on Concentrating Photovoltaics Systems, Miyazaki, Japan 2013
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.  Room temperature PL spectra of AlGaInP/GaInP/AlGaInP DHs grown under different conditions.


.  (a) The 4K PL spectra of samples A and E. (b) Enlarged lower part of (a) to show the low energy peak.


.  300 K TRPL spectra of (a) sample A and (b) sample E.


.  Light I–V and IQE curves for GaInP single junction solar cells grown at different conditions measured under AM0 using a solar simulator.


.   Intensity of 300 K PL spectra of samples A–F grown under various conditions.

.   Measured parameters of the GaInP solar cells SA and SE. (Under AM0 illumination).

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Sasaki K, Agui T, Nakaido K, et al. Development of InGaP/GaAs inverted triple junction concentrator solar cells. Proceedings of 9th International Conference on Concentrating Photovoltaics Systems, Miyazaki, Japan 2013
[10]
King R R, Ermer J H, Joslin D E, et al. Double heterostructures for characterization of bulk lifetime and interface recombination velocity in III-V multijunction solar cells. The 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, Austria, 86, 1998
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    Received: 11 September 2015 Revised: Online: Published: 01 July 2016

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      Yurun Sun, Kuilong Li, Xulu Zeng. Influence of GaInP ordering on the performance of GaInP solar cells[J]. Journal of Semiconductors, 2016, 37(7): 073001. doi: 10.1088/1674-4926/37/7/073001 ****Y R Sun, K L Li, X L Zeng. Influence of GaInP ordering on the performance of GaInP solar cells[J]. J. Semicond., 2016, 37(7): 073001. doi: 10.1088/1674-4926/37/7/073001.
      Citation:
      Yurun Sun, Kuilong Li, Xulu Zeng. Influence of GaInP ordering on the performance of GaInP solar cells[J]. Journal of Semiconductors, 2016, 37(7): 073001. doi: 10.1088/1674-4926/37/7/073001 ****
      Y R Sun, K L Li, X L Zeng. Influence of GaInP ordering on the performance of GaInP solar cells[J]. J. Semicond., 2016, 37(7): 073001. doi: 10.1088/1674-4926/37/7/073001.

      Influence of GaInP ordering on the performance of GaInP solar cells

      DOI: 10.1088/1674-4926/37/7/073001

      • Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61376065) and the Suzhou Science and Technology Project (No. ZXG2013044).

      More Information
      • Corresponding author: Yu Shuzhen, Email: szyu2010@sinano.ac.cn
      • Received Date: 2015-09-11
      • Accepted Date: 2015-12-29
      • Published Date: 2016-07-25

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