J. Semicond. > 2015, Volume 36?>?Issue 9?> 094010

SEMICONDUCTOR DEVICES

Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

Qing Ke, Shaoyang Tan, Songtao Liu, Dan Lu, Ruikang Zhang, Wei Wang and Chen Ji

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 Corresponding author: Ke Qing, keqing12@semi.ac.cn

DOI: 10.1088/1674-4926/36/9/094010

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Abstract: A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (ηi) while maintaining the low internal loss (αi) of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high ηi and overall slope efficiency. A continuous wave (CW) single side output power of 160 mW was obtained for an uncoated laser with a 50-μm active area width and 1 mm cavity length.

Key words: high power, laser, InP, internal loss, internal quantum efficiency



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Fig. 1.  Schematic diagram of the 1.55 $\mu $m MQW laser epitaxial structure.

Fig. 2.  Simulated energy band diagram of the 1.55 $\mu$m laser structure with $Q$1.2 InGaAsP SCLs under flat-band conditions.

Fig. 3.  (Color online) (a) Simulated electron and (b) corresponding hole current density distribution in the vertical direction for different SCL composition $Q$ values (zero on the $x$-axis corresponds to n type substrate).

Fig. 4.  Schematic band diagram of different waveguide structures (Types A-D),with variations in SCL waveguide thickness and QW numbers. Actual parameters given in Table 1,where $E_{\rm g1}$ corresponds to $Q$1.2,$E_{\rm g2}$ corresponds to $Q$1.1.

Fig. 5.  Inverse external differential quantum efficiency 1/$\eta_{\rm d}$ as a function of the cavity length (Type D).

Fig. 6.  CW single side output power against drive current for 1 mm cavity length,50 $\mu $m strip width,uncoated laser diodes from Type D. Laser spectrum at $I =$ 400 mA is shown in the inset.

Table 1.   Active region design parameters,experimental $\alpha_{\rm i}$ and $\eta_{\rm i}$ values,calculated $\alpha_{\rm i}$,and two side slope efficiency at $L=$ 1 mm (Types A-D).

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    Received: 09 February 2015 Revised: Online: Published: 01 September 2015

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      Qing Ke, Shaoyang Tan, Songtao Liu, Dan Lu, Ruikang Zhang, Wei Wang, Chen Ji. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser[J]. Journal of Semiconductors, 2015, 36(9): 094010. doi: 10.1088/1674-4926/36/9/094010 ****Q Ke, S Y Tan, S T Liu, D Lu, R K Zhang, W Wang, C Ji. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser[J]. J. Semicond., 2015, 36(9): 094010. doi: 10.1088/1674-4926/36/9/094010.
      Citation:
      Qing Ke, Shaoyang Tan, Songtao Liu, Dan Lu, Ruikang Zhang, Wei Wang, Chen Ji. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser[J]. Journal of Semiconductors, 2015, 36(9): 094010. doi: 10.1088/1674-4926/36/9/094010 ****
      Q Ke, S Y Tan, S T Liu, D Lu, R K Zhang, W Wang, C Ji. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser[J]. J. Semicond., 2015, 36(9): 094010. doi: 10.1088/1674-4926/36/9/094010.

      Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

      DOI: 10.1088/1674-4926/36/9/094010

      • Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 61274046, 61201103) and the National High Technology Research and Development Program of China (No. 2013AA014202).

      More Information
      • Corresponding author: Ke Qing, keqing12@semi.ac.cn
      • Received Date: 2015-02-09
      • Accepted Date: 2015-03-03
      • Published Date: 2015-01-25

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