J. Semicond. > 2015, Volume 36?>?Issue 9?> 094003

SEMICONDUCTOR DEVICES

Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation

Yanyue Li1, Xiaochuan Deng1, , Yunfeng Liu2, Yanli Zhao3, Chengzhan Li3, Xixi Chen1 and Bo Zhang1

+ Author Affiliations

 Corresponding author: Deng Xiaochuan, xcdeng@uestc.edu.cn

DOI: 10.1088/1674-4926/36/9/094003

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Abstract: The interface properties of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with post-oxidation annealing (POA) in nitric oxide (NO) ambient after high temperature (1300 ℃) oxidation have been investigated using capacitance-voltage (C-V) measurements. The experimental results show that the interface states density can be obviously decreased by the POA in NO ambient, and further reduced with increasing POA temperature and time. In the meantime interface state density and oxidation time could be lowered at higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. POA temperature and time dependence of 4H-SiC MOS interface are also discussed in detail.

Key words: C-V characteristics, 4H-SiC MOS, post-oxidation annealing, SiC/SiO2



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Fig. 1.  The photograph of ellipsometry.

Fig. 2.  The $C$-$V$ curves of different samples.

Fig. 3.  The $V_{\rm FB}$ and $C_{\rm FB}$ of different samples.

Fig. 4.  The density of SiO$_{2}$/SiC interface states of different samples.

Fig. 5.  Bidirectional $C$-$V$ curves of (a) #A and (b) #D samples at various measurement temperatures.

Fig. 6.  High frequency $C$-$V$ curves of SiC-MOS capacitors treated by applying additional BTSs.

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    Received: 26 March 2015 Revised: Online: Published: 01 September 2015

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      Yanyue Li, Xiaochuan Deng, Yunfeng Liu, Yanli Zhao, Chengzhan Li, Xixi Chen, Bo Zhang. Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation[J]. Journal of Semiconductors, 2015, 36(9): 094003. doi: 10.1088/1674-4926/36/9/094003 ****Y Y Li, X C Deng, Y F Liu, Y L Zhao, C Z Li, X X Chen, B Zhang. Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation[J]. J. Semicond., 2015, 36(9): 094003. doi: 10.1088/1674-4926/36/9/094003.
      Citation:
      Yanyue Li, Xiaochuan Deng, Yunfeng Liu, Yanli Zhao, Chengzhan Li, Xixi Chen, Bo Zhang. Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation[J]. Journal of Semiconductors, 2015, 36(9): 094003. doi: 10.1088/1674-4926/36/9/094003 ****
      Y Y Li, X C Deng, Y F Liu, Y L Zhao, C Z Li, X X Chen, B Zhang. Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation[J]. J. Semicond., 2015, 36(9): 094003. doi: 10.1088/1674-4926/36/9/094003.

      Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation

      DOI: 10.1088/1674-4926/36/9/094003
      • 1.

        State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • 2.

        Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China

      • 3.

        Power Electronics Business Unit, Zhuzhou CSR Times Electric Co., Ltd., Zhuzhou 412001, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61234006) and the State Grid of China (No. sgri-wd-71-14- 003).

      More Information
      • Corresponding author: Deng Xiaochuan, xcdeng@uestc.edu.cn
      • Received Date: 2015-03-26
      • Accepted Date: 2015-05-07
      • Published Date: 2015-01-25

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