J. Semicond. > 2015, Volume 36?>?Issue 9?> 093003

SEMICONDUCTOR MATERIALS

Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon

Qinghua Mao, Junlin Liu, Xiaoming Wu, Jianli Zhang, Chuanbing Xiong, Chunlan Mo, Meng Zhang and Fengyi Jiang

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 Corresponding author: Liu Junlin, liujunlin@ncu.edu.cn

DOI: 10.1088/1674-4926/36/9/093003

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Abstract: The unintentional carbon doping concentration of GaN films grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) depends strongly on the growth rate. The concentration of carbon is varied from 2.9 × 1017 to 5.7 × 1018 cm-3 when the growth rate increases from 2.0 to 7.2 μm/h, as detected by secondary ion mass spectroscopy. It is shown that the presence of N vacancies give rises to high carbon concentration. We show that a reduction of the carbon concentration by one order of magnitude compared to the regular sample with nearly same growth rate can be achieved by operating at an extremely high NH3 partial pressure during growth. The intensity ratios of yellow and blue luminescence to band edge luminescence in the samples are found to depend significantly on carbon concentration. The present results demonstrate direct and quantitative evidence that the carbon related defects are the origin of yellow and blue luminescence.

Key words: GaN optoelectronic devices, carbon contamination, high growth rate, yellow luminescence



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Fig. 1.  Unintentional carbon incorporation concentration in n-GaN layers for varied growth rates.

Fig. 2.  (Color online) Room-temperature PL spectra of varied growth rates for n-GaN samples.

Fig. 3.  A plot of the $I_{\rm YL}/I_{\rm BE}$ and $I_{\rm BL}/I_{\rm BE}$ as a function of carbon concentration.

Fig. 4.  Room-temperature PL spectra of sample C (growth rate: 5.5~$\mu $m/h) and sample E (growth rate: 6.0 $\mu $m/h).

Table 1.   The representative characteristics obtained from a series of n-GaN layers with varied growth rates.

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    Received: 10 February 2015 Revised: Online: Published: 01 September 2015

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      Qinghua Mao, Junlin Liu, Xiaoming Wu, Jianli Zhang, Chuanbing Xiong, Chunlan Mo, Meng Zhang, Fengyi Jiang. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. Journal of Semiconductors, 2015, 36(9): 093003. doi: 10.1088/1674-4926/36/9/093003 ****Q H Mao, J L Liu, X M Wu, J L Zhang, C B Xiong, C L Mo, M Zhang, F Y Jiang. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. J. Semicond., 2015, 36(9): 093003. doi: 10.1088/1674-4926/36/9/093003.
      Citation:
      Qinghua Mao, Junlin Liu, Xiaoming Wu, Jianli Zhang, Chuanbing Xiong, Chunlan Mo, Meng Zhang, Fengyi Jiang. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. Journal of Semiconductors, 2015, 36(9): 093003. doi: 10.1088/1674-4926/36/9/093003 ****
      Q H Mao, J L Liu, X M Wu, J L Zhang, C B Xiong, C L Mo, M Zhang, F Y Jiang. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. J. Semicond., 2015, 36(9): 093003. doi: 10.1088/1674-4926/36/9/093003.

      Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon

      DOI: 10.1088/1674-4926/36/9/093003

      • National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China

      Funds:

      Project supported by the Key Program of the National Natural Science Foundation of China (No. 61334001), the National Natural Science Foundation of China (No. 51072076), the National High Technology Research and Development Program of China (Nos. 2011AA03A101, 2012AA041002), the National Key Technology Research and Development Program of China (No. 2011BAE32B01), and the Fund for Less Developed Regions of the National Natural Science Foundation of China (No.11364034).

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      • Corresponding author: Liu Junlin, liujunlin@ncu.edu.cn
      • Received Date: 2015-02-10
      • Accepted Date: 2015-04-12
      • Published Date: 2015-01-25

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