J. Semicond. > 2013, Volume 34?>?Issue 9?> 094010

SEMICONDUCTOR DEVICES

The design and fabrication of a GaN-based monolithic light-emitting diode array

Teng Zhan, Yang Zhang, Jing Li, Jun Ma, Zhiqiang Liu, Xiaoyan Yi, Guohong Wang and Jinmin Li

+ Author Affiliations

 Corresponding author: Zhan Teng, Email:zhanteng10@semi.ac.cn

DOI: 10.1088/1674-4926/34/9/094010

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Abstract: We report a new monolithic structure of GaN-based light-emitting diode (LED) which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic light-emitting diode (MLED) array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protection, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.

Key words: GaN, LED, monolithic, array, high voltage



[1]
Nakamura S, Fasol G. The blue laser diode. New York:Springer, 1997
[2]
Schubert E F. Light-emitting diodes. New York:Cambridge University Process, 2006
[3]
Yen H H, Kuo H C, Yeh W Y. Characteristics of single-chip GaN-based alternating current light-emitting diode. Jpn J Appl Phys, 2008, 47(12):8808 doi: 10.1143/JJAP.47.8808
[4]
Wang C H, Lin D W, Lee C Y, et al. Efficiency and droop improvement in GaN based high voltage light-emitting diodes. IEEE Electron Device Lett, 2011, 32(8):1098 doi: 10.1109/LED.2011.2153176
Fig. 1.  Fabrication process of a light-emitting diode array

Fig. 2.  (a) $\sim $45$^\circ$ epitaxy sidewall angle fabricated method and SEM photograph. (b) $\sim $80$^\circ$ epitaxy sidewall angle fabricated method and SEM photograph. (c) SEM photograph of isolation trench and sidewall after deep etching. (d) SiO2 insulation and metal electrode layer deposited on the sidewall of the isolation trench

Fig. 3.  Lighting photograph of the 12 V HV-LED under 20 mA operation current and the SEM photograph of the isolation layer and interconnection electrode cross the deep trench

Fig. 4.  I-V characteristic of the 12 V HV-LED

Fig. 5.  I-V characteristics of microchip 1, microchip 2, microchip 3 and microchip 4

Fig. 6.  The curves of light output power and peak wavelength versus drive current

[1]
Nakamura S, Fasol G. The blue laser diode. New York:Springer, 1997
[2]
Schubert E F. Light-emitting diodes. New York:Cambridge University Process, 2006
[3]
Yen H H, Kuo H C, Yeh W Y. Characteristics of single-chip GaN-based alternating current light-emitting diode. Jpn J Appl Phys, 2008, 47(12):8808 doi: 10.1143/JJAP.47.8808
[4]
Wang C H, Lin D W, Lee C Y, et al. Efficiency and droop improvement in GaN based high voltage light-emitting diodes. IEEE Electron Device Lett, 2011, 32(8):1098 doi: 10.1109/LED.2011.2153176

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    Received: 30 December 2012 Revised: 27 April 2013 Online: Published: 01 September 2013

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      Teng Zhan, Yang Zhang, Jing Li, Jun Ma, Zhiqiang Liu, Xiaoyan Yi, Guohong Wang, Jinmin Li. The design and fabrication of a GaN-based monolithic light-emitting diode array[J]. Journal of Semiconductors, 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010 ****T Zhan, Y Zhang, J Li, J Ma, Z Q Liu, X Y Yi, G H Wang, J M Li. The design and fabrication of a GaN-based monolithic light-emitting diode array[J]. J. Semicond., 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010.
      Citation:
      Teng Zhan, Yang Zhang, Jing Li, Jun Ma, Zhiqiang Liu, Xiaoyan Yi, Guohong Wang, Jinmin Li. The design and fabrication of a GaN-based monolithic light-emitting diode array[J]. Journal of Semiconductors, 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010 ****
      T Zhan, Y Zhang, J Li, J Ma, Z Q Liu, X Y Yi, G H Wang, J M Li. The design and fabrication of a GaN-based monolithic light-emitting diode array[J]. J. Semicond., 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010.

      The design and fabrication of a GaN-based monolithic light-emitting diode array

      DOI: 10.1088/1674-4926/34/9/094010

      • Semiconductor Lighting R & D Center, Chinese Academy of Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      the National High Technology Research and Development of China 2011AA03A105

      the National High Technology Research and Development of China 2011AA03A108

      Project supported by the National High Technology Research and Development of China (Nos. 2011AA03A108, 2011AA03A105)

      More Information
      • Corresponding author: Zhan Teng, Email:zhanteng10@semi.ac.cn
      • Received Date: 2012-12-30
      • Revised Date: 2013-04-27
      • Published Date: 2013-09-01

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