J. Semicond. > 2013, Volume 34?>?Issue 9?> 094009

SEMICONDUCTOR DEVICES

Novel high-voltage, high-side and low-side power devices with a single control signal

Moufu Kong and Xingbi Chen

+ Author Affiliations

 Corresponding author: Kong Moufu, Email:kongmoufu@163.com

DOI: 10.1088/1674-4926/34/9/094009

PDF

Abstract: Novel high-voltage, high-side and low-side power devices, whose control circuits are referred to as the tub, are proposed and investigated to reduce chip area and improve the reliability of high-voltage integrated circuits. By using the tub circuit to control a branch circuit consisting of a PMOS and a resistor, a pulse signal is generated to control the low-side n-LDMOS after being processed by a low-voltage circuit. Thus, the high-voltage level-shifting circuit is not needed any more, and the parasitic effect of the conventional level-shifting circuit is eliminated. Moreover, the specific on-resistance of the proposed low-side device is reduced by more than 14.3% compared with the conventional one. In the meantime, integrated low-voltage power supplies for the low-voltage circuit and the tub circuit are also proposed. Simulations are performed with MEDICI and SPICE, and the results show that the expectant functions are achieved well.

Key words: power devices, LDMOS, pulse signal, low-voltage power supply



[1]
He J, Zhang Xing. Analytical model of surface field distribution and breakdown voltage for RESURF LDMOS transistor. Chinese Journal of Semiconductors, 2001, 22(9):1102 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX200109001.htm
[2]
Chen Xingbi. Lateral low-side and high-side high-voltage devices. US Patent, No. 6998681, 2006
[3]
Kim J J, Kim M H, Kim S L, et al. The new high voltage level up shifter for HVIC. IEEE 33rd Annual Power Electronics Specialists Conference, 2002, 2:626 http://ieeexplore.ieee.org/document/1022523/
[4]
Terashima T, Shimizu K, Hine S. A new level-shifting technique by divided RESURF structure. International Symposium on Power Semiconductor Devices and IC's, ISPSD, 1997:57 http://ieeexplore.ieee.org/document/601431/authors
[5]
Hossain Z. Determination of manufacturing RESURF process window for a robust 700 V double RESURF LDMOS transistor. Proceedings of the 20th International Symposium on Power Semiconductor Devices & IC's, 2008:133 http://ieeexplore.ieee.org/document/4538916/authors
[6]
Jeon C K, Kim J J, Choi Y S, et al. Analysis of LDMOS structure with inclined p-bottom region. Power Semiconductor Devices and ICs, Proceedings of the 14th International Symposium, 2002:293 http://ieeexplore.ieee.org/document/1016229/keywords
[7]
Shimizu K, Terashima T. The 2nd generation divided RESURF structure for high voltage ICs. 20th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2008:311 http://ieeexplore.ieee.org/document/4538961/
[8]
Chen Xingbi. Surface voltage sustaining structure for semiconductor devices. US Patent, No. 5726469, 1998
[9]
Chen X B, Zhang B, Li Z J. Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping. Solid-State Electron, 1992, 35(9):1365 doi: 10.1016/0038-1101(92)90173-A
[10]
Chen X, Fan X. Optimum VLD makes SPIC better and cheaper. 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, 1:104 http://ieeexplore.ieee.org/document/981433/
[11]
Du Wenfang, Chen Xingbi. A study of second saturation effect of OPTVLD NMOS. 9th IEEE International Conference on ASIC, 2011:551 http://ieeexplore.ieee.org/abstract/document/6157264/
[12]
Kong M F, Chen X B. High voltage low side and high side power devices based on VLD technique. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2012:1 http://ieeexplore.ieee.org/document/6466709/
[13]
Rossberg M, Vogler B, Herzer R. 600 V SOI gate driver IC with advanced level shifter concepts for medium and high power applications. European Conference on Power Electronics and Applications, 2007:1
[14]
Liu Jizhi, Chen Xingbi. A new level-shifting structure with multiply metal rings by divided RESURF technique. Journal of Semiconductors, 2009, 30(4):044005 doi: 10.1088/1674-4926/30/4/044005
[15]
Marari B, Bertotti F, Vignola G A, et al. Smart power ICs:technologies and applications. Springer Verlag, Berlin, Heidelberg, New York, 1995:361
[16]
Chen X B. Method of producing a low-voltage power supply in a power integrated circuit. US Patent, No. 7701006, 2010
Fig. 1.  The schematic circuit diagram of a half-bridge HVIC

Fig. 2.  The structure of the high-side and low-side LDMOS transistors in Refs. [2, 11]

Fig. 3.  (a) The structure of the proposed high-and low-side device. (b) The simulation structure in MEDICI. (c) Schematic circuit diagram and control method of the proposed high-and low-side device

Fig. 4.  (a) Circuit schematic for the simulation. (b) Timing diagram of the control signals $V_{\rm TG}$ and $V_{\rm GL}$. (c) Simulation result of the voltage drop $V_{\rm S}$ across R while only MP is turned on and off. (d) Voltage $V_{\rm S}$ while the turn on and off of ML is just after that of MP

Fig. 5.  (a) Circuit schematic of the pulse signal processing unit, and (b) its simulation result

Fig. 6.  (a) Simulation results of the I-t and V-t curves of the proposed low side. (b) Turn-on and (c) turn-off characteristics, and (d) the RSP of the proposed low side compared with the conventional one

Fig. 7.  (a) The structure of the low-voltage power supply $V_{\rm S1SL}$, and (b) its simulation result

[1]
He J, Zhang Xing. Analytical model of surface field distribution and breakdown voltage for RESURF LDMOS transistor. Chinese Journal of Semiconductors, 2001, 22(9):1102 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX200109001.htm
[2]
Chen Xingbi. Lateral low-side and high-side high-voltage devices. US Patent, No. 6998681, 2006
[3]
Kim J J, Kim M H, Kim S L, et al. The new high voltage level up shifter for HVIC. IEEE 33rd Annual Power Electronics Specialists Conference, 2002, 2:626 http://ieeexplore.ieee.org/document/1022523/
[4]
Terashima T, Shimizu K, Hine S. A new level-shifting technique by divided RESURF structure. International Symposium on Power Semiconductor Devices and IC's, ISPSD, 1997:57 http://ieeexplore.ieee.org/document/601431/authors
[5]
Hossain Z. Determination of manufacturing RESURF process window for a robust 700 V double RESURF LDMOS transistor. Proceedings of the 20th International Symposium on Power Semiconductor Devices & IC's, 2008:133 http://ieeexplore.ieee.org/document/4538916/authors
[6]
Jeon C K, Kim J J, Choi Y S, et al. Analysis of LDMOS structure with inclined p-bottom region. Power Semiconductor Devices and ICs, Proceedings of the 14th International Symposium, 2002:293 http://ieeexplore.ieee.org/document/1016229/keywords
[7]
Shimizu K, Terashima T. The 2nd generation divided RESURF structure for high voltage ICs. 20th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2008:311 http://ieeexplore.ieee.org/document/4538961/
[8]
Chen Xingbi. Surface voltage sustaining structure for semiconductor devices. US Patent, No. 5726469, 1998
[9]
Chen X B, Zhang B, Li Z J. Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping. Solid-State Electron, 1992, 35(9):1365 doi: 10.1016/0038-1101(92)90173-A
[10]
Chen X, Fan X. Optimum VLD makes SPIC better and cheaper. 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, 1:104 http://ieeexplore.ieee.org/document/981433/
[11]
Du Wenfang, Chen Xingbi. A study of second saturation effect of OPTVLD NMOS. 9th IEEE International Conference on ASIC, 2011:551 http://ieeexplore.ieee.org/abstract/document/6157264/
[12]
Kong M F, Chen X B. High voltage low side and high side power devices based on VLD technique. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2012:1 http://ieeexplore.ieee.org/document/6466709/
[13]
Rossberg M, Vogler B, Herzer R. 600 V SOI gate driver IC with advanced level shifter concepts for medium and high power applications. European Conference on Power Electronics and Applications, 2007:1
[14]
Liu Jizhi, Chen Xingbi. A new level-shifting structure with multiply metal rings by divided RESURF technique. Journal of Semiconductors, 2009, 30(4):044005 doi: 10.1088/1674-4926/30/4/044005
[15]
Marari B, Bertotti F, Vignola G A, et al. Smart power ICs:technologies and applications. Springer Verlag, Berlin, Heidelberg, New York, 1995:361
[16]
Chen X B. Method of producing a low-voltage power supply in a power integrated circuit. US Patent, No. 7701006, 2010

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3470 Times PDF downloads: 28 Times Cited by: 0 Times

    History

    Received: 21 March 2013 Revised: 03 May 2013 Online: Published: 01 September 2013

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Moufu Kong, Xingbi Chen. Novel high-voltage, high-side and low-side power devices with a single control signal[J]. Journal of Semiconductors, 2013, 34(9): 094009. doi: 10.1088/1674-4926/34/9/094009 ****M F Kong, X B Chen. Novel high-voltage, high-side and low-side power devices with a single control signal[J]. J. Semicond., 2013, 34(9): 094009. doi: 10.1088/1674-4926/34/9/094009.
      Citation:
      Moufu Kong, Xingbi Chen. Novel high-voltage, high-side and low-side power devices with a single control signal[J]. Journal of Semiconductors, 2013, 34(9): 094009. doi: 10.1088/1674-4926/34/9/094009 ****
      M F Kong, X B Chen. Novel high-voltage, high-side and low-side power devices with a single control signal[J]. J. Semicond., 2013, 34(9): 094009. doi: 10.1088/1674-4926/34/9/094009.

      Novel high-voltage, high-side and low-side power devices with a single control signal

      DOI: 10.1088/1674-4926/34/9/094009

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      Funds:

      Project supported by the 2011 Ph.D. Programs Foundation of the Ministry of Education of China (No. 20110185110003)

      the 2011 Ph.D. Programs Foundation of the Ministry of Education of China 20110185110003

      More Information
      • Corresponding author: Kong Moufu, Email:kongmoufu@163.com
      • Received Date: 2013-03-21
      • Revised Date: 2013-05-03
      • Published Date: 2013-09-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return