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J. Semicond. > 2026, Volume 47?>?Issue 3?> 032401

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High-speed single-mode 850 nm vertical-cavity surface-emitting laser

Si-Cong Tian

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 Corresponding author: Si-Cong Tian, tiansicong@ciomp.ac.cn

DOI: 10.1088/1674-4926/25090008CSTR: 32376.14.1674-4926.25090008

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Abstract: A high-speed single-mode vertical-cavity surface-emitting laser (VCSEL) is one of the most important light sources for optical interconnects in data centers. Single-mode VCSEL can improve the transmission distance. In this letter, we demonstrate a single-mode 850 nm VCSEL with a bit rate of 60 Gb/s under NRZ modulation and 104 Gb/s under PAM4 modulation across a 100 m length of OM5 fiber, without the need for equalization or a filter. In addition, by using optical injection locking, the 3 dB bandwidth is enhanced to 68.5 GHz.

Key words: vertical-cavity surface-emitting laser, high speed, single mode



[1]
Tatum J A, Gazula D, Graham L A, et al. VCSEL-based interconnects for current and future data centers. J Light Technol, 2015, 33(4): 727 doi: 10.1109/JLT.2014.2370633
[2]
Sun Y. Recent advances for high speed short reach optical interconnects for Datacom links. 2017 IEEE CPMT Symposium Japan (ICSJ), 2017: 63
[3]
Wang H L, Fu W N, Qiu J Y, et al. 850 nm VCSELs for 50 Gb/s NRZ error-free transmission over 100-meter OM4 and up to 115 °C operation. 2019 Optical Fiber Communications Conference and Exhibition (OFC), 2019: 1
[4]
Lee S Y, Chen X, Lo W C, et al. 850-nm Dual-mode VCSEL carried 53-Gbps NRZ- OOK transmission in 100-m graded-index single-mode fiber. Optical Fiber Communication Conference (OFC) 2021, 2021: Tu5C.3
[5]
Ramana Murty M V, Wang J Y, Harren A L, et al. Development and characterization of 100 Gb/s data communication VCSELs. IEEE Photonics Technol Lett, 2021, 33(16): 812 doi: 10.1109/LPT.2021.3069146
[6]
Wang J Y, Murty R, Feng Z W, et al. High speed 850nm oxide VCSEL development for 100Gb/s ethernet at Broadcom. Vertical-Cavity Surface-Emitting Lasers XXVI, 2022: 1202009
[7]
Aoki T, Hiiro H, Tanaka R, et al. Performance of PAM-4 VCSEL for short-reach 100 Gb/s per lane applications up to 85°C. Vertical-Cavity Surface-Emitting Lasers XXVI, 2022: 120200C
[8]
Lavrencik J, Varughese S, Thomas V A, et al. 100Gbps PAM-4 transmission over 100m OM4 and wideband fiber using 850nm VCSELs. 42nd European Conference and Exhibition on Optical Communications (ECOC), 2016: 1
[9]
Liu A J, Hao C X, Huo J Y, et al. Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL. J Semicond, 2024, 45(10): 102401 doi: 10.1088/1674-4926/24070025
[10]
Lau E K, Zhao X X, Sung H K, et al. Strong optical injection-locked semiconductor lasers demonstrating >100-GHz resonance frequencies and 80-GHz intrinsic bandwidths. Opt Express, 2008, 16(9): 6609 doi: 10.1364/OE.16.006609
[11]
Lau E K, Sung H K, Wu M C. Frequency response enhancement of optical injection-locked lasers. IEEE J Quantum Electron, 2008, 44(1): 90 doi: 10.1109/JQE.2007.910450
[12]
Liu A J, Tang B, Li Z Y, et al. 70 Gbps PAM-4 850-nm oxide-confined VCSEL without equalization and pre-emphasis. J Semicond, 2024, 45(5): 050501 doi: 10.1088/1674-4926/45/5/050501
Fig. 1.  (Color online) The schematic diagram of the 850 nm VCSEL.

Fig. 2.  (Color online) L?I?V curves of the 850 nm VCSEL under 25 °C.

Fig. 3.  (Color online) Spectra of the 850 nm VCSEL under the current of 2.6 mA and 25 °C.

Fig. 4.  (Color online) Resonance frequency and 3 dB bandwidth of the 850 nm VCSEL for different currents under 25 °C.

Fig. 5.  (Color online) 3 dB bandwidth of the 850 nm VCSEL by using the strong optical injection locking under 25 °C.

Fig. 6.  (Color online) 60 Gb/s NRZ eye diagrams of the 850 nm VCSEL under 25 °C.

Fig. 7.  (Color online) 104 Gb/s PAM4 eye diagrams of the 850 nm VCSEL under 25 °C.

Table 1.   3 dB bandwidth of VCSEL by OIL.

References Wavelength
(nm)		 3 dB bandwidth
without OIL (GHz)		 3 dB bandwidth
with OIL (GHz)
Ref. [10] 1550 <10 80
This work 850 28.5 68.5
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[1]
Tatum J A, Gazula D, Graham L A, et al. VCSEL-based interconnects for current and future data centers. J Light Technol, 2015, 33(4): 727 doi: 10.1109/JLT.2014.2370633
[2]
Sun Y. Recent advances for high speed short reach optical interconnects for Datacom links. 2017 IEEE CPMT Symposium Japan (ICSJ), 2017: 63
[3]
Wang H L, Fu W N, Qiu J Y, et al. 850 nm VCSELs for 50 Gb/s NRZ error-free transmission over 100-meter OM4 and up to 115 °C operation. 2019 Optical Fiber Communications Conference and Exhibition (OFC), 2019: 1
[4]
Lee S Y, Chen X, Lo W C, et al. 850-nm Dual-mode VCSEL carried 53-Gbps NRZ- OOK transmission in 100-m graded-index single-mode fiber. Optical Fiber Communication Conference (OFC) 2021, 2021: Tu5C.3
[5]
Ramana Murty M V, Wang J Y, Harren A L, et al. Development and characterization of 100 Gb/s data communication VCSELs. IEEE Photonics Technol Lett, 2021, 33(16): 812 doi: 10.1109/LPT.2021.3069146
[6]
Wang J Y, Murty R, Feng Z W, et al. High speed 850nm oxide VCSEL development for 100Gb/s ethernet at Broadcom. Vertical-Cavity Surface-Emitting Lasers XXVI, 2022: 1202009
[7]
Aoki T, Hiiro H, Tanaka R, et al. Performance of PAM-4 VCSEL for short-reach 100 Gb/s per lane applications up to 85°C. Vertical-Cavity Surface-Emitting Lasers XXVI, 2022: 120200C
[8]
Lavrencik J, Varughese S, Thomas V A, et al. 100Gbps PAM-4 transmission over 100m OM4 and wideband fiber using 850nm VCSELs. 42nd European Conference and Exhibition on Optical Communications (ECOC), 2016: 1
[9]
Liu A J, Hao C X, Huo J Y, et al. Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL. J Semicond, 2024, 45(10): 102401 doi: 10.1088/1674-4926/24070025
[10]
Lau E K, Zhao X X, Sung H K, et al. Strong optical injection-locked semiconductor lasers demonstrating >100-GHz resonance frequencies and 80-GHz intrinsic bandwidths. Opt Express, 2008, 16(9): 6609 doi: 10.1364/OE.16.006609
[11]
Lau E K, Sung H K, Wu M C. Frequency response enhancement of optical injection-locked lasers. IEEE J Quantum Electron, 2008, 44(1): 90 doi: 10.1109/JQE.2007.910450
[12]
Liu A J, Tang B, Li Z Y, et al. 70 Gbps PAM-4 850-nm oxide-confined VCSEL without equalization and pre-emphasis. J Semicond, 2024, 45(5): 050501 doi: 10.1088/1674-4926/45/5/050501

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    History

    Received: 09 September 2025 Revised: 15 September 2025 Online: Accepted Manuscript: 29 September 2025Uncorrected proof: 12 November 2025Published: 15 March 2026

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      Si-Cong Tian. High-speed single-mode 850 nm vertical-cavity surface-emitting laser[J]. Journal of Semiconductors, 2026, 47(3): 032401. doi: 10.1088/1674-4926/25090008 ****S C Tian, High-speed single-mode 850 nm vertical-cavity surface-emitting laser[J]. J. Semicond., 2026, 47(3): 032401 doi: 10.1088/1674-4926/25090008
      Citation:
      Si-Cong Tian. High-speed single-mode 850 nm vertical-cavity surface-emitting laser[J]. Journal of Semiconductors, 2026, 47(3): 032401. doi: 10.1088/1674-4926/25090008 ****
      S C Tian, High-speed single-mode 850 nm vertical-cavity surface-emitting laser[J]. J. Semicond., 2026, 47(3): 032401 doi: 10.1088/1674-4926/25090008

      High-speed single-mode 850 nm vertical-cavity surface-emitting laser

      DOI: 10.1088/1674-4926/25090008
      CSTR: 32376.14.1674-4926.25090008

      • Bimberg Chinese German Center for Green Photonics & State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

      More Information
      • Si-Cong Tian received his B. Sc. and Ph. D. degrees in Physics from Jilin University, China, in 2007 and 2012, respectively. From 2016?2017 he studied at Arkansas University, US, as a visiting scholar. Currently, he is a Professor at Bimberg Chinese?German Center for Green Photonics, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, China. His research interests include high-speed vertical-cavity surface-emitting lasers and high-brightness semiconductor lasers
      • Corresponding author: tiansicong@ciomp.ac.cn
      • Received Date: 2025-09-09
      • Revised Date: 2025-09-15
        • Available Online: 2025-09-29

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