Chin. J. Semicond. > 2007, Volume 28?>?Issue 12?> 1888-1894

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Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems

Zhang Jinmin, Xie Quan, Zeng Wuxian, Liang Yan, Zhang Yong, Yu Ping and Tian Hua

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Abstract: Pure metal Fe films with thickness of about 100nm were deposited on Si (100) substrates by DC magnetron sputtering.Annealing was subsequently performed in a vacuum furnace in the temperature range of 600~1000℃ for 2h.The samples were characterized by means of Rutherford backscattering (RBS) with 3MeV carbon ions.The RBS data were fitted with SIMNRA 60,and the results show the atomic interdiffusion in Fe/Si systems.The microstructures and crystal structures were characterized by scanning electron microscope and X-ray diffraction.The effects of annealing on atomic interdiffusion,silicide formation,and microstructures in Fe/Si systems were analyzed.

Key words: magnetron sputtering, annealing, RBS, atomic interdiffusion, microstructure

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    Received: 18 August 2015 Revised: 30 July 2007 Online: Published: 01 December 2007

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      Zhang Jinmin, Xie Quan, Zeng Wuxian, Liang Yan, Zhang Yong, Yu Ping, Tian Hua. Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems[J]. Journal of Semiconductors, 2007, 28(12): 1888-1894. ****Zhang J M, Xie Q, Zeng W X, Liang Y, Zhang Y, Yu P, Tian H. Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems[J]. Chin. J. Semicond., 2007, 28(12): 1888.
      Citation:
      Zhang Jinmin, Xie Quan, Zeng Wuxian, Liang Yan, Zhang Yong, Yu Ping, Tian Hua. Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems[J]. Journal of Semiconductors, 2007, 28(12): 1888-1894. ****
      Zhang J M, Xie Q, Zeng W X, Liang Y, Zhang Y, Yu P, Tian H. Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems[J]. Chin. J. Semicond., 2007, 28(12): 1888.

      Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems

      • ollege of Electronic Science and Information Technology,Guizhou University,Guiyang 550025,China

      • ollege of Electronic Science and Information Technology,Guizhou University,Guiyang 550025,China

      • ollege of Electronic Science and Information Technology,Guizhou University,Guiyang 550025,China

      • ollege of Electronic Science and Information Technology,Guizhou University,Guiyang 550025,China

      • ollege of Electronic Science and Information Technology,Guizhou University,Guiyang 550025,China

      • ollege of Electronic Science and Information Technology,Guizhou University,Guiyang 550025,China

      • ollege of Electronic Science and Information Technology,Guizhou University,Guiyang 550025,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-11
      • Revised Date: 2007-07-30
      • Published Date: 2007-11-28

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