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J. Semicond. > 2008, Volume 29?>?Issue 11?> 2192-2196

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Intensity Noise Suppression of an FP Laser by External Injection Locking

Ren Min, Han Wei, Xie Liang, Chen Wei, Zhang Yan, Ju Yu, Zhang Hongguang, Zhang Banghong and Zhu Ninghua

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Abstract: The optimal intensity noise suppression of a Fabry-Perot (FP) laser is experimentally acquired by relatively strong external optical injection locking technology.The maximum suppression is up to 9dB around the relaxation oscillation peak of the free running FP laser.We demonstrate how the injection light power and detuning frequency influence the intensity noise suppression effects.Additionally,the relationship between the optimal suppression range and the stable locking range is experimentally studied:both ranges enlarge as the injection light power increases,but the stable locking range permits larger detuning frequency at identical injection light power.

Key words: intensity noise suppression, FP laser, external injection locking

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    Received: 18 August 2015 Revised: 14 July 2008 Online: Published: 01 November 2008

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      Ren Min, Han Wei, Xie Liang, Chen Wei, Zhang Yan, Ju Yu, Zhang Hongguang, Zhang Banghong, Zhu Ninghua. Intensity Noise Suppression of an FP Laser by External Injection Locking[J]. Journal of Semiconductors, 2008, 29(11): 2192-2196. ****Ren M, Han W, Xie L, Chen W, Zhang Y, Ju Y, Zhang H G, Zhang B H, Zhu N H. Intensity Noise Suppression of an FP Laser by External Injection Locking[J]. J. Semicond., 2008, 29(11): 2192.
      Citation:
      Ren Min, Han Wei, Xie Liang, Chen Wei, Zhang Yan, Ju Yu, Zhang Hongguang, Zhang Banghong, Zhu Ninghua. Intensity Noise Suppression of an FP Laser by External Injection Locking[J]. Journal of Semiconductors, 2008, 29(11): 2192-2196. ****
      Ren M, Han W, Xie L, Chen W, Zhang Y, Ju Y, Zhang H G, Zhang B H, Zhu N H. Intensity Noise Suppression of an FP Laser by External Injection Locking[J]. J. Semicond., 2008, 29(11): 2192.

      Intensity Noise Suppression of an FP Laser by External Injection Locking

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-06-12
      • Revised Date: 2008-07-14
      • Published Date: 2008-11-11

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