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J. Semicond. > 2008, Volume 29?>?Issue 2?> 352-355

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An Air-Bridge Inter-Connection Method for Microwave and High Temperature Devices

Lin Ruobing, Wei Wei, Feng Qian, Wang Chong and Hao Yue

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Abstract: A flexible air-bridge method is proposed that is useful for high temperature microwave devices.This method makes use of different resists to give several resists as a sacrificial layer.After low temperature baking, a perfect arch sacrificial layer of bridges with a ratio higher than 60% is obtained.An air-bridge inter-connection structure with excellent characteristics and high reliability can be easily fabricated with this method.

Key words: air-bridge, arch, sacrificial layer technology

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    Received: 18 August 2015 Revised: 25 September 2007 Online: Published: 01 February 2008

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      Lin Ruobing, Wei Wei, Feng Qian, Wang Chong, Hao Yue. An Air-Bridge Inter-Connection Method for Microwave and High Temperature Devices[J]. Journal of Semiconductors, 2008, 29(2): 352-355. ****Lin R B, Wei W, Feng Q, Wang C, Hao Y. An Air-Bridge Inter-Connection Method for Microwave and High Temperature Devices[J]. J. Semicond., 2008, 29(2): 352.
      Citation:
      Lin Ruobing, Wei Wei, Feng Qian, Wang Chong, Hao Yue. An Air-Bridge Inter-Connection Method for Microwave and High Temperature Devices[J]. Journal of Semiconductors, 2008, 29(2): 352-355. ****
      Lin R B, Wei W, Feng Q, Wang C, Hao Y. An Air-Bridge Inter-Connection Method for Microwave and High Temperature Devices[J]. J. Semicond., 2008, 29(2): 352.

      An Air-Bridge Inter-Connection Method for Microwave and High Temperature Devices

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-17
      • Revised Date: 2007-09-25
      • Published Date: 2008-01-31

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