PAPERS
Abstract: The 1/fγ noise characteristic parameterSfγ model in an n-MOSFET under DC hot carrier stress is studied.A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented.The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied.Experimental results agree well with the developed model.
Key words: n-MOSFET, hot carrier, 1/fγ noise
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Received: 18 August 2015 Revised: 27 January 2008 Online: Published: 01 July 2008
| Citation: |
Liu Yu'an, Yu Xiaoguang. 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress[J]. Journal of Semiconductors, 2008, 29(7): 1263-1267.
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Liu Y, Yu X G. 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress[J]. J. Semicond., 2008, 29(7): 1263.
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