Chin. J. Semicond. > 2007, Volume 28?>?Issue 6?> 918-922

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A Novel Structure for a Static Induction Transistor

Tang Ying, Liu Su, Li Siyuan, Wu Rong and Chang Peng

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Abstract: A new structure is presented for designing and fabricating a static induction transistor (SIT).The transistor is designed to be surrounded by a deep groove to cut off the various probable parasitic effects that may degrade the device performance,especially the parallel-current effect.A mathematical model for the parasitic effect of SIT is proposed and simulated with PSPICE.The simulation results agree with the experiments.The novel structure is effective for avoiding the parallel-current effect.The etching technique of the groove is also investigated in depth in this paper.

Key words: SIT, deep groove structure, parasitic effect, deep groove etching

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    Received: 18 August 2015 Revised: 12 February 2007 Online: Published: 01 June 2007

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      Tang Ying, Liu Su, Li Siyuan, Wu Rong, Chang Peng. A Novel Structure for a Static Induction Transistor[J]. Journal of Semiconductors, 2007, 28(6): 918-922. ****Tang Y, Liu S, Li S Y, Wu R, Chang P. A Novel Structure for a Static Induction Transistor[J]. Chin. J. Semicond., 2007, 28(6): 918.
      Citation:
      Tang Ying, Liu Su, Li Siyuan, Wu Rong, Chang Peng. A Novel Structure for a Static Induction Transistor[J]. Journal of Semiconductors, 2007, 28(6): 918-922. ****
      Tang Y, Liu S, Li S Y, Wu R, Chang P. A Novel Structure for a Static Induction Transistor[J]. Chin. J. Semicond., 2007, 28(6): 918.

      A Novel Structure for a Static Induction Transistor

      • Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China

      • Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-20
      • Revised Date: 2007-02-12
      • Published Date: 2007-05-30

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