J. Semicond. > 2008, Volume 29?>?Issue 11?> 2121-2124

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The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots

Liang Zhimei, Wu Ju, Jin Peng, Lü Xueqin and Wang Zhanguo

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Abstract: Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated.Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks.By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified.Furthermore,inter-subband spacing of electrons and holes are deduced.

Key words: quantum dots, multi-peak structure, energy-level structure, photoluminescence

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    Received: 18 August 2015 Revised: 16 May 2008 Online: Published: 01 November 2008

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      Liang Zhimei, Wu Ju, Jin Peng, Lü Xueqin, Wang Zhanguo. The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots[J]. Journal of Semiconductors, 2008, 29(11): 2121-2124. ****Liang Z M, Wu J, Jin P, Lü X, Wang Z G. The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots[J]. J. Semicond., 2008, 29(11): 2121.
      Citation:
      Liang Zhimei, Wu Ju, Jin Peng, Lü Xueqin, Wang Zhanguo. The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots[J]. Journal of Semiconductors, 2008, 29(11): 2121-2124. ****
      Liang Z M, Wu J, Jin P, Lü X, Wang Z G. The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots[J]. J. Semicond., 2008, 29(11): 2121.

      The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-05-16
      • Revised Date: 2008-05-16
      • Published Date: 2008-11-11

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