J. Semicond. > 2008, Volume 29?>?Issue 1?> 179-182

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Intermediate Layer Bonding for Silicon and Glass Based on UV Adhesive

Cheng Wenjin, Tang Zirong, Liao Guanglan, Shi Tielin, Lin Xiaohui and Peng Ping

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Abstract: Taking advantage of the transparency of glass and the maturity of UV curing technology,an intermediate layer bonding process with ultraviolet curable adhesive was investigated to bond silicon wafer to glass substrate.Following the spin-coating of UV-curable adhesive onto the wafer,the silicon wafer and glass substrate were bonded under UV light with a wavelength of 365nm.Experimental results demonstrate that the UV curing approach can be applied in the silicon-glass intermediate layer bonding.The bonding strength can reach over 26MPa and the thickness of the intermediate layer is about 5~6μm.The process is effective,simple,and low cost,and it will have potential applications in low-temperature microelectronics packaging.

Key words: room-temperature bonding, intermediate layer, UV curing

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    Received: 18 August 2015 Revised: 10 August 2007 Online: Published: 01 January 2008

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      Cheng Wenjin, Tang Zirong, Liao Guanglan, Shi Tielin, Lin Xiaohui, Peng Ping. Intermediate Layer Bonding for Silicon and Glass Based on UV Adhesive[J]. Journal of Semiconductors, 2008, 29(1): 179-182. ****Cheng W J, Tang Z R, Liao G L, Shi T L, Lin X H, Peng P. Intermediate Layer Bonding for Silicon and Glass Based on UV Adhesive[J]. J. Semicond., 2008, 29(1): 179.
      Citation:
      Cheng Wenjin, Tang Zirong, Liao Guanglan, Shi Tielin, Lin Xiaohui, Peng Ping. Intermediate Layer Bonding for Silicon and Glass Based on UV Adhesive[J]. Journal of Semiconductors, 2008, 29(1): 179-182. ****
      Cheng W J, Tang Z R, Liao G L, Shi T L, Lin X H, Peng P. Intermediate Layer Bonding for Silicon and Glass Based on UV Adhesive[J]. J. Semicond., 2008, 29(1): 179.

      Intermediate Layer Bonding for Silicon and Glass Based on UV Adhesive

      • School of Mechanical Science & Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China

      • School of Mechanical Science & Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China

      • School of Mechanical Science & Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China

      • School of Mechanical Science & Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China

      • School of Mechanical Science & Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China

      • School of Mechanical Science & Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

      • Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-20
      • Revised Date: 2007-08-10
      • Published Date: 2007-12-26

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