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J. Semicond. > 2008, Volume 29?>?Issue 11?> 2260-2264

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Photoluminescence Properties of ZnO Nanorods Prepared Under Low Temperature

Lang Jihui, Yang Jinghai, Li Changsheng, Han Qiang, Yang Lili, Wang Dandan, Gao Ming and Liu Xiaoyan

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Abstract: Zinc oxide (ZnO) nanorods are grown on ITO conducting glass with the chemical bath deposition (CBD) method.XRD,SEM,and PL are used to characterize the crystal structures,surface morphologies,and photoluminescence properties of ZnO nanorods.The X-ray measurement results show that the growth orientation of the as-prepared ZnO nanorods is (002).The SEM results show that the size of ZnO nanorods increases with the molar concentration of zinc nitrate,and the diameter and length of nanorods increases significantly through tuning the reaction time when the molar concentration is 0.1M.The photoluminescence measurements show that the all the samples have good photoluminescence behaviors.The crystallization of the samples increases with the molar concentration of zinc nitrate and the reaction time.

Key words: ZnO nanorod molar concentration of zinc nitrate reaction time photoluminescence

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    Received: 18 August 2015 Revised: 20 June 2008 Online: Published: 01 November 2008

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      Lang Jihui, Yang Jinghai, Li Changsheng, Han Qiang, Yang Lili, Wang Dandan, Gao Ming, Liu Xiaoyan. Photoluminescence Properties of ZnO Nanorods Prepared Under Low Temperature[J]. Journal of Semiconductors, 2008, 29(11): 2260-2264. ****Lang J H, Yang J H, Li C S, Han Q, Yang L L, Wang Dandan, Gao M, Liu X Y. Photoluminescence Properties of ZnO Nanorods Prepared Under Low Temperature[J]. J. Semicond., 2008, 29(11): 2260.
      Citation:
      Lang Jihui, Yang Jinghai, Li Changsheng, Han Qiang, Yang Lili, Wang Dandan, Gao Ming, Liu Xiaoyan. Photoluminescence Properties of ZnO Nanorods Prepared Under Low Temperature[J]. Journal of Semiconductors, 2008, 29(11): 2260-2264. ****
      Lang J H, Yang J H, Li C S, Han Q, Yang L L, Wang Dandan, Gao M, Liu X Y. Photoluminescence Properties of ZnO Nanorods Prepared Under Low Temperature[J]. J. Semicond., 2008, 29(11): 2260.

      Photoluminescence Properties of ZnO Nanorods Prepared Under Low Temperature

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-07
      • Revised Date: 2008-06-20
      • Published Date: 2008-11-11

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