Chin. J. Semicond. > 2007, Volume 28?>?Issue 4?> 573-575

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Research on InP-Based AlAs/In0.53Ga0.47As RTD

Gao Jinhuan, Yang Ruixia, Wu Yibin, Liu Yuewei, Shang Yaohui and Yang Kewu

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Abstract: The research and fabrication of an InP-based AlAs/In0.53Ga0.47As double barrier single well resonant tunneling diode (RTD) device are reported.The material structure was grown on (001) semi-induction InP wafer by molecular beam epitaxy,and the device was fabricated with a mesa structure.The DC characteristics for the RTD sample were measured at room temperature.The peak-to-valley current ratio was 7.4,and the peak current density JP was 1.06e2A/cm2.

Key words: resonant tunneling diode, molecular beam epitaxy, mesa structure, InP substrate, peak-to-valley current ratio

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    Received: 18 August 2015 Revised: 10 November 2006 Online: Published: 01 April 2007

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      Gao Jinhuan, Yang Ruixia, Wu Yibin, Liu Yuewei, Shang Yaohui, Yang Kewu. Research on InP-Based AlAs/In0.53Ga0.47As RTD[J]. Journal of Semiconductors, 2007, 28(4): 573-575. ****Gao J, Yang R X, Wu Y B, Liu Y W, Shang Y, Yang K W. Research on InP-Based AlAs/In0.53Ga0.47As RTD[J]. Chin. J. Semicond., 2007, 28(4): 573.
      Citation:
      Gao Jinhuan, Yang Ruixia, Wu Yibin, Liu Yuewei, Shang Yaohui, Yang Kewu. Research on InP-Based AlAs/In0.53Ga0.47As RTD[J]. Journal of Semiconductors, 2007, 28(4): 573-575. ****
      Gao J, Yang R X, Wu Y B, Liu Y W, Shang Y, Yang K W. Research on InP-Based AlAs/In0.53Ga0.47As RTD[J]. Chin. J. Semicond., 2007, 28(4): 573.

      Research on InP-Based AlAs/In0.53Ga0.47As RTD

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • School of Information Engineering,Hebei University of Technology,Tianjin 300130,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • Department of Electrical Engineering,Shijiazhuang Railway Institute,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-10-09
      • Revised Date: 2006-11-10
      • Published Date: 2007-04-09

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